Related papers: Quantum dot state initialization by control of tun…

We investigate the performance of dynamical decoupling methods at suppressing electron spin decoherence from a low-temperature nuclear spin reservoir in a quantum dot. The controlled dynamics is studied through exact numerical simulation,…

Qubits of long coherence time and fast quantum operations are long-sought objectives towards the realization of high-fidelity quantum operations and their applications to the quantum technologies. An electron levitated in a vacuum by a Paul…

A quantum dot hybrid qubit formed from three electrons in a double quantum dot has the potential for great speed, due to presence of level crossings where the qubit becomes charge-like. Here, we show how to take full advantage of the level…

This paper reviews recent studies of mesoscopic fluctuations in transport through ballistic quantum dots, emphasizing differences between conduction through open dots and tunneling through nearly isolated dots. Both the open dots and the…

Strong electron and spin correlations in a double-quantum-dot (DQD) can give rise to different quantum states. We observe a continuous transition from a Kondo state exhibiting a single-peak Kondo resonance to another exhibiting a double…

Solid state quantum bits are a promising candidate for the realization of a scalable quantum computer, however, they are usually strongly limited by decoherence. We consider a double quantum dot charge qubit, whose basis states are defined…

The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic…

We fabricated a quantum dot coupled laterally to a two-dimensional electron gas and vertically to a three-dimensional electron gas in order to investigate the eigenstate dependence of tunneling rate to these gases. We observed a…

Dynamic quantum dots can be formed by time-dependent electrostatic potentials in nanoelectronic devices, such as gate- or surface-acoustic-wave-driven electron pumps. Ability to control the number of captured electrons with high precision…

We prepare a triple quantum dot with a separate contact lead to each dot to study Pauli spin blockade in the tunnel-coupled three dots in a row. We measure the tunneling current flowing between the center dot and either the left or right…

We propose a new implementation of a universal set of one- and two-qubit gates for quantum computation using the spin states of coupled single-electron quantum dots. Desired operations are effected by the gating of the tunneling barrier…

We demonstrate high fidelity entangling quantum gates within a chain of five trapped ion qubits by optimally shaping optical fields that couple to multiple collective modes of motion. We individually address qubits with segmented optical…

It is discovered that the zero-dimensional character of the silicon atom dangling bond (DB) state allows controlled formation and occupation of a new form of quantum dot assemblies. Whereas on highly doped n-type substrates isolated DBs are…

Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be…

The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of…

Singlet-triplet spin blockade in a few-electron lateral double quantum dot is investigated using simultaneous transport and charge-sensing measurements. Transport from the (1,1) to the (0,2) electron occupancy states is strongly suppressed…

Quantum phase transitions (QPTs) in qubit systems are known to produce singularities in the entanglement, which could in turn be used to probe the QPT. Current proposals to measure the entanglement are challenging however, because of their…

A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the…

We present finite bias transport measurements on a few-electron quantum dot. In the Coulomb blockade regime, strong signatures of inelastic cotunneling occur which can directly be assigned to excited states observed in the non-blockaded…

Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…