Related papers: Quantum dot state initialization by control of tun…

A novel method of coherent manipulation of the electron tunneling in quantum-dots is proposed, which utilizes the quantum interference in nonadiabatic double-crossing of the discrete energy levels. In this method, we need only a smoothly…

We consider the transport spectroscopy of a quantum dot with an even number of electrons at finite bias voltage within the Coulomb blockade diamond. We calculate the tunneling current due to the elastic and inelastic co-tunneling processes…

We study the two-qubit controlled-not gate operating on qubits encoded in the spin state of a pair of electrons in a double quantum dot. We assume that the electrons can tunnel between the two quantum dots encoding a single qubit, while…

We describe a novel mechanism for charge pumping through tunnel-coupled quantum dots in the regime of strong Coulomb blockade. The quantum state of an additional electron within the structure is steered by changing the tunneling couplings…

Semiconductor quantum dots (QDs) offer a platform to explore the physics of quantum electronics including spins. Electron spins in QDs are considered good candidates for quantum bits in quantum information processing, and spin control and…

We measure the electron escape-rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate-equations are used to extract the tunnelling rates, which change by an order of magnitude with tunnel-barrier gate…

We address a foundational question in quantum mechanics: Can a particle be directly found in a classically forbidden virtual state? We instantiate this conceptual question by investigating the traversal of electrons through a tunnel…

Theoretical analysis of the experimental data for the energy levels of two interacting electrons confined by a finite Gaussian potential in a 2D quantum dot and subjected to a uniform magnetic field perpendicular to the plane of the dot is…

We present a theoretical analysis of the phonon-assisted relaxation in a system composed of two self-assembled vertically stacked quantum dots. We construct realistic model, which takes into account the geometry and strain distribution in…

We study theoretically phonon-assisted relaxation and tunnelling in a system composed of a quantum dot which is coupled to a quantum well. Within the kp method combined with the L\"owdin elimination, we calculate the electron states. We…

We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most 2D Landau level filling factors, we find that tunneling can be characterized by a single,…

We demonstrate theoretically that it is possible to use Rabi oscillations to coherently control the electron tunneling in an asymmetric double quantum dot system, a quantum dot molecule. By applying an optical pump pulse we can excite an…

We demonstrate a scalable device architecture that facilitates indirect exchange between singlet-triplet spin qubits, mediated by an intermediate quantum state. The device comprises five quantum dots, which can be independently loaded and…

We are pursuing a capability to perform time resolved manipulations of single spins in quantum dot circuits involving more than two quantum dots. In this paper, we demonstrate full counting statistics as well as averaging techniques we use…

We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable…

We study the impact of off-resonant tunneling and coherences on the electron pumping through quantum dots. Thereby, we focus on two electron-pump setups where lowest-order tunneling processes are suppressed and the pump is exclusively…

The magnetic character of the ground-state of two electrons on a double quantum dot, connected in series to left and right single-channel leads, is considered. By solving exactly for the spectrum of the two interacting electrons, it is…

This paper proposes a universal microscopic model for the shallow confinement regime of single-electron tunneling devices. We consider particle escape from a quantum well generically emerging as a bifurcation in a smooth electrostatic…

Tunneling is measured via the quantum levels of a metal nanoparticle. We analyze quantitatively the resonance energies, widths, and amplitudes, both in the regime where only one state is accessible for tunneling and in the non-equilibrium…

We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…