Related papers: On Resistive Memories: One Step Row Readout Techni…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
Memristor is a promising building block for the next generation nonvolatile random access memory and bio-inspired computing systems. Organizing memristors into high density crossbar arrays, although challenging, is critical to meet the…
Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…
Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used to…
Resistive random-access memory (ReRAM) is a promising candidate for the next generation non-volatile memory technology due to its simple read/write operations and high storage density. However, its crossbar array structure causes a severe…
Crossbar architectures have long been seen as a promising foundation for in-memory computing, using memristor arrays for high-density, energy-efficient analog computation. However, this conventional architecture suffers from a fundamental…
In-memory computing (IMC) utilizing synaptic crossbar arrays is promising for energy-efficient deep neural network (DNN) accelerators. Various technologies (CMOS and post-CMOS) have been explored as synaptic device candidates, each with its…
1T1R (1-transistor-1-resistor) memory crossbar arrays represent a promising solution for compute-in-memory matrix-vector multiplication accelerators and embedded or storage-class memory. However, the size and scaling of these arrays are…
The memristor, because of its controllability over a wide dynamic range of resistance, has emerged as a promising device for data storage and analog computation. A major challenge is the accurate measurement of memristance over a wide…
Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a…
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…
Resistive random access memory (RRAM) is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to…
In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circuits are presented. Typical electrical characterization of…
Due to low power consumption and high-speed performance, superconductor circuit technology has emerged as an attractive and compelling post-CMOS technology candidate. However, the design of dense memory circuits presents a significant…
Reading several ReRAMs simultaneously in a neuromorphic circuit increases power consumption and limits scalability. Applying small inference read pulses is a vain attempt when offset voltages of the read-out circuit are decisively more.…
Memristors are promising devices for scalable and low power, in-memory computing to improve the energy efficiency of a rising computational demand. The crossbar array architecture with memristors is used for vector matrix multiplication…
Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…
Resistive random-access memory is one of the most promising candidates for the next generation of non-volatile memory technology. However, its crossbar structure causes severe "sneak-path" interference, which also leads to strong inter-cell…
Stochastic behaviors of resistive random access memory (RRAM) play an important role in the design of cross-point memory arrays. A Monte Carlo compact model of oxide RRAM is developed and calibrated with experiments on various device stack…
A new readout technique was developed with the primary aim of keeping the number of channels in the front-end electronics as low as possible when scaling up the sensitive area of a Resistive Plate Chamber (RPC). The readout method here…