Related papers: Trapping and counting ballistic non-equilibrium el…
Electron motion in an oblique shock wave is studied by means of a one-dimensional, relativistic, electromagnetic, particle simulation code with full ion and electron dynamics. It is found that an oblique shock can produce electrons with…
The interplay of strain engineering and photon-assisted tunneling of electrons in graphene is considered for giving rise to atypical transport phenomena. The combination of uniaxial strain and a time-periodic potential barrier helps to…
Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin quantum bits (qubits). Transferring electrons extremely efficiently in a narrow channel structure with underlying gates has been…
We study a penetration of an electron with high energy E<<T through strongly disordered wire of length L<<a (a being the localization length). Such an electron can loose, but not gain the energy, when hopping from one localized state to…
Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the…
Conduction of electrons in matter is ultimately described by quantum mechanics. Yet at low frequency or long time scales, low temperature quantum transport is perfectly described by this very simple idea: electrons are emitted by the…
Solid state physics deals with systems composed of atoms with strongly bound electrons. The tunneling probability of each electron is determined by interactions that typically extend to neighboring sites, as their corresponding wave…
We study the nonequilibrium characteristics of superconducting tunnel structures in the case when one of the superconductors is a small island confined between large superconductors. The state of this island can be probed for example via…
In the presence of a finite interlayer displacement field bilayer graphene has an energy gap that is dependent on stacking and largest for the stable AB and BA stacking arrangements. When the relative orientations between layers are twisted…
We present magnetotransport measurements on freely suspended two-dimensional electron gases from AlGaAs/GaAs heterostructures. The technique to realize such devices relies on a specially MBE grown GaAs/AlGaAs-heterostructure including a…
We propose to couple a trapped single electron to superconducting structures located at a variable distance from the electron. The electron is captured in a cryogenic Penning trap using electric fields and a static magnetic field in the…
In mesoscopic and nanoscale systems at low temperatures, charge carriers are typically not in thermal equilibrium with the surrounding lattice. The resulting, non-equilibrium dynamics of electrons has only begun to be explored.…
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…
We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is…
The pattern of branched electron flow revealed by scanning gate microscopy shows the distribution of ballistic electron trajectories. The details of the pattern are determined by the correlated potential of remote dopants with an amplitude…
A model calculation is presented to characterize the anomalous cross-field transport of electrons in a Hall thruster geometry. The anomalous nature of the transport is attributed to the chaotic dynamics of the electrons arising from their…
We report the observation in the direct space of the transport of a few thousand charges submitted to a tunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observed using the same Electrostatic…
We investigate theorerically the non-equilibrium transport through a molecular quantum dot as a function of gate and bias voltage, taking into account the typical situation in molecular electronics. In this respect, our study includes…
Several models of thermionic energy nanoconverters have been proposed to study the transport phenomena that take place in electronic devices. For example, in resonant tunneling junctions those phenomena are manifested through the…
We present a theoretical investigation of the voltage-driven metal insulator transition based on solving coupled Boltzmann and Hartree-Fock equations to determine the insulating gap and the electron distribution in a model system -- a one…