Related papers: Quantum Anomalous Hall Effect through Canted Antif…
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect…
We report the observation of anomalous Hall resistivity in single crystals of EuAl$_4$, a centrosymmetric tetragonal compound, which exhibits coexisting antiferromagnetic (AFM) and charge-density-wave (CDW) orders with onset at…
Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall…
We report the occurrence of ferromagnetic-like anomalous Hall effect (AHE) below $30$ mT in bismuth single and policrystals. The signatures of ferromagnetism in transport are not corroborated in magnetization measurements, thus suggesting…
The symmetry considerations that imply a non-zero anomalous Hall effect (AHE) in certain non-collinear antiferromagnets also imply both non-zero orbital magnetization and a net spin magnetization. We have explicitly evaluated the orbital…
We have studied the anomalous Hall effect (AHE) in strained thin films of the frustrated antiferromagnet Mn$_{3}$NiN. The AHE does not follow the conventional relationships with magnetization or longitudinal conductivity and is enhanced…
It is well known that the intrinsic anomalous Hall effect (AHE) arises from the integration of the non-zero Berry curvature (BC), conventionally observed in the Dirac/Weyl and nodal-line semimetals. Moreover, nodal surface semimetals are…
Noncollinear antiferromagnets have recently been attracting considerable interest partly due to recent surprising discoveries of the anomalous Hall effect (AHE) in them and partly because they have promising applications in…
Due to the potential applications in the low-power-consumption spintronic devices, the quantum anomalous Hall effect (QAHE) has attracted tremendous attention in past decades. However, up to now, QAHE was only observed experimentally in…
We show that the quantum anomalous Hall effect almost always occurs in magnetic topological insulator thin films whenever the top and bottom surface layer magnetizations are parallel, independent of the interior layer magnetization…
The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films…
Recently, antiferromagnetic (AF) materials have attracted rapid attention, because they are considered as outstanding candidates to replace the widely used ferromagnets in the next generation of spintronics. We propose a magnetoresistance…
The Hall effect, particularly that arising from in-plane magnetic field, has recently emerged as a sensitive probe of quantum geometric properties in solids. Especially in trigonal systems, in-plane anomalous Hall effect (AHE) can be…
Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature.…
We proposed a theory of quantum anomalous Hall effect in a flat-band ferromagnet on a two-dimensional (2D) decorated lattice with spin-orbit coupling. Free electrons on the lattice have dispersionless flat bands, and the ground state is…
We theoretically report that, with \textit{in-plane} magnetization, the quantum anomalous Hall effect (QAHE) can be realized in two-dimensional atomic crystal layers with preserved inversion symmetry but broken out-of-plane mirror…
Recently, a type of Hall effect due to an unusual layer-locked Berry curvature called the layer Hall effect (LHE) has been reported in the even-layered two-dimensional antiferromagnetic (AFM) MnBi2Te4 [A. Gao et.al, Nature 595, 521 (2021)].…
Antiferromagnets are promising candidates for next-generation spintronic devices owing to their negligible stray fields and ultrafast spin dynamics. The noncollinear antiferromagnet $\mathrm{Mn}_{3}\mathrm{Sn}$ exhibits a large anomalous…
Exploring combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is one of the most important questions for valleytronic applications. The key to address this issue is to achieve spin splitting around the…
Quantum anomalous Hall (QAH) effect provides dissipationless chiral channels for spin transport, expected as an outstanding candidate in future low-power quantum computation. The spin-splitting band structure is vital for obtaining QAH…