Related papers: Electron Bessel beam diffraction for precise and a…
Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes…
Recently, a number of reconstruction algorithms have been presented for residual strain tomography from Bragg-edge neutron transmission measurements. In this paper, we examine whether strain tomography can also be achieved from diffraction…
The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano) electronic devices, often leads to residual stress in the different layers present. This stress gradient can change many of the material…
The use of highly sensitive pixelated direct detectors has dramatically improved the performance of high energy instrumentation such as transmission electron microscopy. Here, we describe a recently developed monolithic active pixel sensor…
Advancements in fast electron detectors have enabled the statistically significant sampling of crystal structures on the nanometre scale by means of Scanning Electron Nanobeam Diffraction (SEND). Characterisation of structural similarity…
The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of…
We present an investigation of inkjet printed strain gauges based on two-dimensional (2D) materials. The technology leverages water-based and biocompatible inks to fabricate strain measurement devices on flexible substrates such as paper.…
Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical (NEMS) devices. Here, we conclusively demonstrate the piezoresistive effect in graphene in a…
Ultrafast electron diffraction (UED) instruments typically operate at kHz or lower repetition rates and rely on indirect detection of electrons. However, these experiments encounter limitations because they are required to use electron…
The Scanning electron microscope (SEM) and Electron-Dispersive Spectroscope (EDS) are two highly effective instruments in the field of nanoscience and nanotechnology. The quality of these instruments is determined by various factors, with…
Diffraction-based methods have become an invaluable tool for the detailed assessment of residual strain and stress within experimental mechanics. These methods typically measure a component of the average strain within a gauge volume. It is…
Metal wire networks rely on percolation paths for electrical conduction, and by suitably introducing break-make junctions on a flexible platform, a network can be made to serve as a resistive strain sensor. Several experimental designs have…
Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile…
The time-resolved electron beam envelope parameters including sectional distribution and position are important and necessary for the study of beam transmission characteristics in the magnetic field and verifying the magnetic field setup…
Recently, a method for obtaining diffraction-attenuation resistant beams in absorbing media was developed through suitable superposition of ideal zero-order Bessel beams. In this work, we will show that such beams maintain their resistance…
Electrochemistry is the underlying mechanism in a variety of energy conversion and storage systems, and it is well known that the composition, structure, and properties of electrochemical materials near active interfaces often deviates…
Aberration-corrected optics have made electron microscopy at atomic-resolution a widespread and often essential tool for nanocharacterization. Image resolution is dominated by beam energy and the numerical aperture of the lens ({\alpha}),…
Strong intensity attenuation limits the use of conventional diffraction-free optical elements. We show a possible solution to the exponential intensity attenuation limiting the use of Fresnel-type diffraction-free nanometer-scale optics by…
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…
Techniques for training artificial neural networks (ANNs) and convolutional neural networks (CNNs) using simulated dynamical electron diffraction patterns are described. The premise is based on the following facts. First, given a suitable…