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New nanotechnology based devices are replacing CMOS devices to overcome CMOS technology's scaling limitations. However, many such devices exhibit non-monotonic I-V characteristics and uncertain properties which lead to the negative…
Noise-induced switching between coexisting metastable states occurs in a wide range of far-from-equilibrium systems including micro-mechanical oscillators, epidemiological and climate change models, and nonlinear electronic transport in…
We present a simple one-dimensional trapping model prompted by the problem of ion current across biological membranes. The trap is modeled mimicking the ionic channel membrane behaviour. Such voltage-sensitive channels are open or closed…
Geometry incommensurability between weakly coupled shells in multi-walled carbon nanotubes is shown to be the origin of unconventional electronic conduction mechanism, power-law scaling of the conductance, and remarkable magnetotransport…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
In this Letter we report high-resolution synchrotron X-ray powder diffraction and transmission electron microscope analysis of Mn-substituted LaFeAsO samples, demonstrating that a static incommensurate modulated structure develops across…
Thin dielectric elastomers with compliant electrodes exhibit various types of instability under the action of electromechanical loading. Guided by the thermodynamically-based formulation of Fosdick and Tang (J. Elasticity 88, 255-297,…
Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are…
We have conducted experiments to probe how the dynamics of nanocontact vortex oscillators can be modulated by an external signal. We explore the phase-locking properties in both the commensurate and chaotic regimes, where chaos appears to…
In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates. The MOS devices have been subjected to constant voltage stress (CVS) conditions at…
We measure and characterize anomalous motional decoherence of an atomic ion confined in the lowest quantum levels of a novel rf ion trap that features moveable electrodes. The scaling of decoherence rate with electrode proximity is…
The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic…
Surface probes such as scanning tunneling microscopy (STM) have detected complex patterns at the nanoscale, indicative of electronic inhomogeneity, in a variety of high temperature superconductors. In cuprates, the pattern formation is…
Coulomb blockade (CB) arises in nanoscale systems with ultra-small capacitance, where discrete charging effects dictate electron transport, enabling wide-ranging applications based on single-electron transistors. Despite established…
In this paper we present an influence of discontinuous coupling on the dynamics of multistable systems. Our model consists of two periodically forced oscillators that can interact via soft impacts. The controlling parameters are the…
The concept of lumped optical nanoelements (or metactronics), wherein nanometer-scale structures act as nanoinductors, nanocapacitors and nanoresistors, has attracted a great deal of attention as a simple toolbox for engineering different…
We reveal intrinsic fracture nonreciprocity, manifesting as directional asymmetry in crack resistance, in two-dimensional heterostructures engineered through lattice-mismatched interfaces. Density-functional theory combined with…
We predict the conditions under which two oppositely charged membranes show a dynamic, attractive instability. Two layers with unequal charges of opposite sign can repel or be stable when in close proximity. However, dynamic charge density…
We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH…
Optical devices with metastable states controlled with light (optical flip-flops) are needed in data storage, signal processing and displays. Although non-volatile optical memory relying on structural phase transitions in chalcogenide…