Related papers: Switching on superferromagnetism
We report for the first time, that Fe3Se4 is a room temperature, type-II multiferroic with magnetoelectric coupling. We observed the coexistence of coupled ferrimagnetic and ferroelectric ordering in Fe3Se4nanorods well above room…
We present a study of the control of electric field induced strain on the magnetic and electrical transport properties in a magneto-elastically coupled artificial multiferroic Fe3O4/BaTiO3 heterostructure. In this Fe3O4/BaTiO3…
Cross-correlation between magnetic and dielectric properties has been attracting renewed interest because of the fundamental as well as technological importance of controlling the electric (magnetic) polarization by an external magnetic…
The antiferromagnetic to ferromagnetic phase transition in B2-ordered FeRh is imaged in laterally confined nanopatterned islands using photoemission electron microscopy with x-ray magnetic circular dichroism contrast. The resulting magnetic…
A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, helping to explain why polar metals are…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
The magnetic arrangement in the vicinity of the interface between a ferromagnet and an antiferromagnet is investigated, in particular its dependence on the exchange couplings and the temperature. Applying a Heisenberg model, both sc(001)…
It is shown theoretically that a giant magnetoelectric susceptibility exceeding 10^-6 s/m may be achieved in the ferromagnetic/ferroelectric epitaxial systems via the magnetization rotation induced by an electric field applied to the…
Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is…
It is shown that magnetic states and field-driven reorientation transitions in synthetic antiferromagnets crucially depend on contributions of higher-order anisotropies. A phenomenological macrospin model is derived to describe the magnetic…
Conventional nonpolar nematic liquid crystals, widely known for their successful display applications, are not well-suited for fast electro-optical switching because of the slow (milliseconds) field-off relaxation of the director. In this…
After the application of an ultrashort laser pulse, the antiferromagnetic alignment in rare earth-transition metal alloys can temporarily become ferromagnetic with the rare-earth polarity. Proposed models merely describe this effect,…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
Multiferroics offer exciting opportunities for electric-field control of magnetism. Unfortunately, single-phase multiferroics suitable for such applications at room temperature has not been discovered. Here, we propose the concept of a new…
Multiferroic materials, in which ferroelectric and magnetic ordering coexist, are of fundamental interest for the development of novel memory devices that allow for electrical writing and non-destructive magnetic readout operation. The…
We have developed a new magnetoelectric material based on Ga doped {\alpha}-Fe2O3 in rhombohedral phase. The material is a canted ferromagnet at room temperature and showing magneto-electric properties. The experimental results of electric…
Electric field-induced magnetization switching in multiferroics holds profound promise for ultra-low-energy computing in beyond Moore's law era. Bistable nanomagnets in the multiferroics are usually deemed to be suitable for storing a…
In metal-insulator transition materials, a small perturbation can shift the delicate balance between competing or coexisting electronic phases, leading to dramatic changes of the material's properties. Using La0.7Sr0.3MnO3, a prototypical…
To advance the use of thermally-activated magnetic materials in device applications it is necessary to examine their behaviour on the localised scale in operando conditions. Equi-atomic FeRh undergoes a magnetostructural transition from an…
Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and…