Related papers: Switching on superferromagnetism
We study magnetic state and electron transport properties of composite multiferroic system consisting of a granular ferromagnetic thin film placed above the ferroelectric substrate. Ferroelectricity and magnetism in this case are coupled by…
Controlling magnetism by using electric fields is a goal of research towards novel spintronic devices and future nano-electronics. For this reason, multiferroic heterostructures attract much interest. Here we provide experimental evidence,…
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…
Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
The quantitative understanding of converse magnetoelectric effects, i.e., the variation of the magnetization as a function of an applied electric field, in extrinsic multiferroic hybrids is a key prerequisite for the development of future…
The coexistence of ferroelectric and ferromagnetic properties at room temperature is very rarely observed. We have been successful in converting ferroelectric PbTiO3 into a magnetoelectric material by partly substituting Fe at the Ti site.…
The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…
Electric control of magnetism is a vision which drives intense research on magnetic semiconductors and multiferroics. Recently, also ultrathin metallic films were reported to show magnetoelectric effects at room temperature. Here we…
Cross-coupling of ordering parameters in multiferroic materials by multiple external stimuli other than electric field and magnetic field is highly desirable from both practical application and fundamental study points of view. Recently,…
Electrical tuning of magnetism is crucial for developing fast, compact, ultra-low power electronic devices. Multiferroics offer significant potential due to their ability to control magnetic via an electric field through magnetoelectric…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…
Based on numerical simulations, we demonstrate thermally induced magnetic switching in synthetic ferrimagnets composed of multilayers of rare-earth and transition metals. Our findings show that deterministic magnetization reversal occurs…
Antiferromagnetic materials are promising platforms for the development of ultra-fast spintronics and magnonics due to their robust magnetism, high-frequency relativistic dynamics, low-loss transport, and the ability to support topological…
Spintronics in ferromagnetic metals is built on a complementary set of phenomena in which magnetic configurations influence transport coefficients and transport currents alter magnetic configurations. In this Letter we propose that…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et…
The intended use of a magnetic material, from information storage to power conversion, depends crucially on its domain structure, traditionally crafted during materials synthesis. By contrast, we show that an external magnetic field applied…
Multiferroics have received intense attention due to their great application potential in multi-state information storage devices and new types of sensors. Coupling among ferroic orders such as ferroelectricity, (anti-)ferromagnetism,…