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Related papers: Vertical, electrolyte-gated organic transistors: c…

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High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these…

Materials Science · Physics 2015-05-20 S. Ono , N. Minder , Z. Chen , A. Facchetti , A. F. Morpurgo

In this work it is reported a vertical electrolyte transistor (VET) whose structure is based on stacked layers as described below: bottom contact (source or drain) - channel - permeable intermediate electrode (drain or source) - ion gel…

Applied Physics · Physics 2022-01-13 Keli Fabiana Seidel

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor…

We demonstrate an electrolyte-gated hybrid nanoparticle/organic synapstor (synapse-transistor, termed EGOS) that exhibits short-term plasticity as biological synapses. The response of EGOS makes it suitable to be interfaced with neurons:…

We report on organic field-effect transistors with unprecedented resistance against gate bias stress. The single crystal and thin-film transistors employ the organic gate dielectric Cytop(TM). This fluoropolymer is highly water repellent…

Materials Science · Physics 2009-12-21 Wolfgang L. Kalb , Thomas Mathis , Simon Haas , Arno F. Stassen , Bertram Batlogg

We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…

Other Condensed Matter · Physics 2009-11-10 R. W. I. de Boer , M. E. Gershenson , A. F. Morpurgo , V. Podzorov

Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations,…

Materials Science · Physics 2013-02-15 Ignacio Gutiérrez Lezama , Alberto F. Morpurgo

Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…

Mesoscale and Nanoscale Physics · Physics 2019-04-23 Marta Perucchini , Enrique G. Marin , Damiano Marian , Giuseppe Iannaccone , Gianluca Fiori

An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…

Mesoscale and Nanoscale Physics · Physics 2012-01-19 Kristian Storm , Gustav Nylund , Lars Samuelson , Adam P. Micolich

Organic electrochemical transistors (OECTs) have the potential to revolutionize the field of organic bioelectronics. To date, most of the reported OECTs include p-type (semi-)conducting polymers as the channel material, while n-type OECTs…

We explore solid electrolytes for electrostatic gating using field-effect transistors (FETs) in which thin WSe$_2$ crystals are exfoliated and transferred onto a lithium-ion conducting glass ceramic substrate. For negative gate voltages…

Mesoscale and Nanoscale Physics · Physics 2018-07-25 Marc Philippi , Ignacio Gutiérrez-Lezama , Nicolas Ubrig , Alberto F. Morpurgo

We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor…

Materials Science · Physics 2010-01-01 M. P. Walser , W. L. Kalb , T. Mathis , B. Batlogg

Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with…

Applied Physics · Physics 2023-01-24 Ramesh Singh Bisht , Pramod Kumar

As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon…

Materials Science · Physics 2007-05-23 Pengfei Qi , Ali Javey , Marco Rolandi , Qian Wang , Erhan Yenilmez , Hongjie Dai

We report on an artificial synapse, an organic synapse-transistor (synapstor) working at 1 volt and with a typical response time in the range 100-200 ms. This device (also called NOMFET, Nanoparticle Organic Memory Field Effect Transistor)…

Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-electrolyte gates, which pose experimental constraints and make…

We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The…

Strongly Correlated Electrons · Physics 2009-11-10 V. Podzorov , S. E. Sysoev , E. Loginova , V. M. Pudalov , M. E. Gershenson

The Organic Permeable Base Transistor (OPBT) is currently the fastest organic transistor with a transition frequency of 40 MHz. It relies on a thin aluminum base electrode to control the transistor current. This electrode is surrounded by a…

Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy and distributed intelligent objects. The possibility of exploiting solution-based and direct-writing…

Applied Physics · Physics 2020-09-16 Andrea Perinot , Michele Giorgio , Virgilio Mattoli , Dario Natali , Mario Caironi

We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 {\mu}m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident…

Mesoscale and Nanoscale Physics · Physics 2012-09-13 Han Liu , Jiangjiang Gu , Peide Ye
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