Related papers: Quantifying Temperature-dependent Substrate Loss i…
Nb3Sn (Tc ~ 18 K and Hsh ~ 400 mT) is a prospective material to replace Nb (Tc ~ 9 K and Hsh ~ 200 mT) in SRF accelerator cavities for significant cost reduction and performance enhancement. Because of its material properties, Nb3Sn is best…
This work studies the effect of temperature on the binding energy of a shallow hydrogenic impurity located on the axis of a cylindrical semiconductor GaAs Al_x Ga_{1-x} As quantum well wire. The results show that the binding energy at a low…
The performance of superconducting circuits for quantum computing is limited by materials losses. In particular, coherence times are typically bounded by two-level system (TLS) losses at single photon powers and millikelvin temperatures.…
Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community as it presents a direct bandgap of ~1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm2V-1 s-1. However, a study of…
In the present paper, high transmission bit rate of a thermal arrayed waveguide grating (AWG) which is composed of lithium niobate (LiNbO3)/polymethyl metha acrylate (PMMA) hybrid materials on a silicon substrate in Passive Optical Networks…
Temperature dependence of far-infrared transmission of NbN thin films deposited on MgO and Si substrates was measured at several frequencies from 0.4 up to 4.3 THz. Exponential increase of relative penetration depth at low temperatures and…
Aluminum nitride (AlN)-based thin-film bulk acoustic wave resonators (FBARs) are promising compact platforms for 6G communications and quantum memory hardware, enabled by their integrable acoustic modes with high quality factors. However,…
Two-dimensional semiconducting materials have a wide range of applications in various fields due to their excellent properties and rich physics. Here, we report a detailed investigation of the temperature dependent Raman and…
The electronic and transport properties of graphene modulated by magnetic barrier arrays are derived for finite temperature. Prominent conductance gaps, originating from quantum interference effects are found in the periodic array case.…
We examine the temperature dependence of thermal conductivity of one dimensional nonlinear (anharmonic) lattices with and without on-site potential. It is found from computer simulation that the heat conductivity depends on temperature via…
The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) technique under various growth conditions. GaN NWs…
We develop a temperature dependent empirical pseudopotential theory to study the electronic and optical properties of self-assembled quantum dots (QDs) at finite temperature. The theory takes the effects of both lattice expansion and…
The thermal conductivity of suspended single-layer graphene was measured as a function of temperature using Raman scattering spectroscopy on clean samples prepared directly on a prepatterned substrate by mechanical exfoliation without…
Colloidal Cadmium Selenide (CdSe) nanoplatelets (NPLs) are a recently developed class of efficient luminescent nanomaterial suitable for optoelectronic device applications. A change in temperature greatly affects their electronic…
Systematic measurements of the $^{63}$Cu(2) NQR line width were performed in underdoped YBa$_2$Cu$_3$O$_{7-y}$ samples over the temperature range 4.2 K $<T<300$ K. It was shown that the copper NQR line width monotonically increases upon…
We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With…
The charge density wave (CDW) state in van der Waals systems shows interesting scaling phenomena as the number of layers can significantly affect the CDW transition temperature, $T_{CDW}$. However, it is often difficult to use conventional…
Nanomechanical silicon nitride (SiN) drum resonators are currently employed in various fields of applications that arise from their unprecedented frequency response to physical quantities. In the present study, we investigate the thermal…
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of…
Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-modules for 5G and 6G applications. The main contribution to RF losses is the interface between the III-N layer and the HR Si wafer, more…