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The ultrafast photoinduced insulator-metal transition in VO2 is studied at different temperatures and excitation fluences using multi-THz probe pulses. The spectrally resolved mid-infrared response allows us to trace separately the dynamics…
We apply ultrafast spectroscopy to establish a time-domain hierarchy between structural and electronic effects in a strongly-correlated electron system. We discuss the case of the model system VO2, a prototypical non-magnetic compound that…
Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room…
Brain-inspired non-Boolean computing offers intrinsic error tolerance and parallelism, but its practical deployment is limited by the lack of compact, energy-efficient spiking hardware compatible with large-scale integration. Mott…
We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…
Vanadium dioxide (VO$_{2}$) undergoes a first-order metal-insulator transition (MIT) upon cooling near room temperature, concomitant with structural change from rutile to monoclinic. Accurate characterization of lattice vibrations is vital…
Light-manipulation of correlated electronic phases in solids offers the tantalizing prospect of realizing electronic devices operating at the ultrafast time-scale. In this context, the experimental realization of non-equilibrium transitions…
The metal insulator transition (MIT) in VO2 has been an important topic for recent years. It has been generally agreed that the mechanism of the MIT in bulk VO2 is considered to be a collaborative Mott-Peierls transition, however the effect…
We present a spectroscopic study that reveals that the metal-insulator transition of strained VO$_2$ thin films may be driven towards a purely electronic transition, which does not rely on the Peierls dimerization, by the application of…
The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…
Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…
Metal-insulator transition underlies many remarkable and technologically important phenomena in VO2. Even though its monoclinic structure had before been the reserve of the insulating state, recent experiments have observed an unexpected…
Electrically driven metal-insulator transition in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal (MIM)…
The popular dual electronic (Mott) and structural (Peierls) transitions in VO2 are explored using x-ray absorption spectromicroscopy with high spatial and spectral resolutions. It is found that during both heating and cooling, the…
We present a theoretical investigation of the electronic structure of rutile (metallic) and M$_1$ and M$_2$ monoclinic (insulating) phases of VO$_2$ employing a fully self-consistent combination of density functional theory and embedded…
The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing…
Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the…
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…
A strongly correlated Mott first-order metal-insulator transition (MIT) (or Jump) not accompanied by the structural phase transition (SPT) was clearly revealed in VO_2, (New J. Phys. 6 (1004) 52, Appl. Phys. Lett. 86 (2005) 242101, Physica…