Related papers: Mn4N ferrimagnetic thin films for sustainable spin…
Ferrimagnetic alloy thin films that exhibit perpendicular (out-of-plane) magnetic anisotropy (PMA) with low saturation magnetization, such as GdCo and Mn4N, were predicted to be favorable for hosting small Neel skyrmions for room…
Ferrimagnets have received renewed attention as a promising platform for spintronic applications. Of particular interest is the Mn4N from the ${\epsilon}$-phase of the manganese nitride as an emergent rare-earth-free spintronic material due…
The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001)…
The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial…
Ferrimagnets take the advantages of both ferromagnets and antiferromagnets making them promise for spintronic applications. Here we prepared ferrimagnetic Mn4N thin films with high Curie temperature and investigated the crystalline…
Over the past few years, intensive studies of ultrathin epitaxial films of perovskite oxides have often revealed exciting properties like giant magnetoresistive tunnelling and electric field effects. Spinel oxides appear as even more…
The ferrimagnetic inverse spinel NiCo2O4 has attracted extensive research interests for its versatile electrochemical properties, robust magnetic order, high conductivity, and fast spin dynamics, as well as its highly tunable nature due to…
Spintronics, a transformative field of research, leverages the spin of electron to revolutionize electronic devices, offering significant advantages over traditional charge-based systems. This chapter highlights the critical role of novel…
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and…
Structural and magnetic properties of Mn5(SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the…
Ferromagnetic materials dominate as the magnetically active element in spintronic devices, but come with drawbacks such as large stray fields, and low operational frequencies. Compensated ferrimagnets provide an alternative as they combine…
The generation and control of spin currents are crucial for advancing next-generation spintronic technologies. These technologies depend on materials capable of efficiently sourcing and interconverting spin and charge currents, while…
Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate…
The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic…
The rapid progress in antiferromagnetic and altermagnetic spintronics has led to increased interest in magnetic materials with vanishing net magnetization but strong spin-dependent transport properties. As thin films of such materials…
Two-dimensional (2D) ferromagnetic materials have been exhibiting promising potential in applications, such as spintronics devices. To grow epitaxial magnetic films on silicon substrate, in the single-layer limit, is practically important…
Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl…
Mn$_3$Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial $c$-plane Mn$_3$Sn thin films have been grown on a…
Oxide based ferromagnet/semiconductor heterostructures offer substantial advantages for spin electronics. We have grown (111) oriented Fe3O4 thin films and Fe3O4/ZnO heterostructures on ZnO(0001) and Al2O3(0001) substrates by pulsed laser…
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to…