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We have examined the electronic structure evolution in transition metal dichalcogenides MX$_2$, where M=Mo,W and X=S,Se and Te. These are generally referred to as van der Waals heterostructures on the one hand, yet one has band gap changes…

Mesoscale and Nanoscale Physics · Physics 2024-02-02 S. K. Pandey , Ruma Das , Priya Mahadevan

Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered…

Van der Waals (vdW) heterobilayers formed by two-dimensional (2D) transition metal dichalcogenides (TMDCs) created a promising platform for various electronic and optical properties. ab initio band results indicate that the band offset of…

Materials Science · Physics 2020-09-04 Yuanyuan Wang , Fengping Li , Wei Wei , Baibiao Huang , Ying Dai

Two-dimensional (2D) transition-metal dichalcogenide (TMD) MX$_2$ (M = Mo, W; X= S, Se, Te) possess unique properties and novel applications. In this work, we perform first-principles calculations on the van der Waals (vdW) stacked MX$_2$…

Transition metal dichalcogenide (TMD) monolayers and heterostructures have emerged as a compelling class of materials with transformative new science that may be harnessed for novel device technologies. These materials are commonly…

Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal…

Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is…

Mesoscale and Nanoscale Physics · Physics 2018-07-24 Evgeniy Ponomarev , Nicolas Ubrig , Ignacio Gutiérrez-Lezama , Helmuth Berger , Alberto F. Morpurgo

Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for…

Two-dimensional (2D) materials have disrupted materials science due to the development of van der Waals technology. It enables the stacking of ultrathin layers of materials characterized by vastly different electronic structures to create…

Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not…

Mesoscale and Nanoscale Physics · Physics 2022-02-04 Xirui Wang , Kenji Yasuda , Yang Zhang , Song Liu , Kenji Watanabe , Takashi Taniguchi , James Hone , Liang Fu , Pablo Jarillo-Herrero

Two-dimensional (2D) graphene-like layered semiconductors provide a new platform for materials research because of their unique mechanical, electronic and optical attributes. Their in-plane covalent bonding and dangling-bond-free surface…

Materials Science · Physics 2018-08-29 Zhiming Shi , Xinjiang Wang , Yuanhui Sun , Yawen Li , Lijun Zhang

Two-dimensional (2D) materials family with its many members and different properties has recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D materials can be constructed into heterostructures or…

Applied Physics · Physics 2021-01-01 Junyang Tan , Shisheng Li , Bilu Liu1 , Hui-Ming Cheng

Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties…

Molecular-scale manipulation of electronic/ionic charge accumulation in materials is a preeminent challenge, particularly in electrochemical energy storage. Layered van der Waals (vdW) crystals exemplify a diverse family of materials that…

Semiconductor heterostructures form the cornerstone of many electronic and optoelectronic devices and are traditionally fabricated using epitaxial growth techniques. More recently, heterostructures have also been obtained by vertical…

Mesoscale and Nanoscale Physics · Physics 2014-07-29 Marco M. Furchi , Andreas Pospischil , Florian Libisch , Joachim Burgdörfer , Thomas Mueller

By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped…

Mesoscale and Nanoscale Physics · Physics 2012-09-06 S. J. Haigh , A. Gholinia , R. Jalil , S. Romani , L. Britnell , D. C. Elias , K. S. Novoselov , L. A. Ponomarenko , A. K. Geim , R. Gorbachev

In analogous to the Su-Schrieffer-Heeger (SSH) model, one-dimensional (1D) electromagnetic (EM) crystals can exhibit nontrivial topological properties. In particular, when a nontrivial EM crystal is in contact with its trivial counterpart,…

Optics · Physics 2023-01-11 C. Liu , H. C. Ong

The interface between two different semiconductors is crucial in determining the electronic properties at the heterojunction, therefore novel techniques that can probe these regions are of particular interest. Recently it has been shown…

Mesoscale and Nanoscale Physics · Physics 2021-09-01 Frederico B. Sousa , Lucas Lafeta , Alisson R. Cadore , Prasana K. Sahoo , Leandro M. Malard

Throughout the years, strongly correlated coherent states of excitons have been the subject of intense theoretical and experimental studies. This topic has recently boomed due to new emerging quantum materials such as van der Waals (vdW)…

Mesoscale and Nanoscale Physics · Physics 2021-12-30 Igor V. Bondarev , Oleg L. Berman , Roman Ya. Kezerashvili , Yurii E. Lozovik

Two-dimensional (2D) van der Waals (vdW) heterostructures consist of different 2D crystals with diverse properties, constituting the cornerstone of the new generation of 2D electronic devices. Yet interfaces in heterostructures inevitably…

Materials Science · Physics 2024-09-04 Yuxiang Gao , Fenglin Deng , Ri He , Zhicheng Zhong