Related papers: Diluted Oxide Interfaces with Tunable Ground State…
Strongly correlated electronic systems exhibit a wealth of unconventional behavior stemming from strong electron-electron interactions. The LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructure supports rich and varied low-temperature transport…
Reports of emergent conductivity, superconductivity, and magnetism at oxide interfaces have helped to fuel intense interest in their rich physics and technological potential. Here we employ magnetic force microscopy to search for…
At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report…
At interfaces between complex oxides it is possible to generate electronic systems with unusual electronic properties, which are not present in the isolated oxides. One important example is the appearance of superconductivity at the…
We present a study of delta ($\delta$) doping at LaTiO$_3$/SrTiO$_3$ (LTO/STO) interface with iso-structural antiferromagnetic perovskite LaCrO$_3$ (LCO) that dramatically alters the properties of the two dimensional electron gas (2-DEG) at…
In recent years, striking discoveries have revealed that two-dimensional electron liquids (2DEL) confined at the interface between oxide band-insulators can be engineered to display a high mobility transport. The recognition that only few…
The interface superconductivity in LaAlO$_{3}$-SrTiO$_{3}$ heterostructures reveals a non-monotonic behavior of the critical temperature as a function of the two-dimensional density of charge carriers. We develop a theoretical description…
For many years a spin-state transition at $T \approx 100 K$ and insulator - metal transition (IMT) at $T_{IMT} \approx 600 K$ in LaCoO$_3 $ remains a mystery. Small low-spin - high-spin spin gap $\Delta _S = E\left( {HS} \right) - E\left(…
The discovery of a two-dimensional (2D) electron gas at the (110)-oriented LaAlO3/SrTiO3 in- terface provided us with the opportunity to probe the effect of crystallographic orientation and the ensuing electronic reconstructions on…
The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two…
Multiple experiments have observed a sharp transition in the band structure of LaAlO$_3$/SrTiO$_3$ (001) interfaces as a function of applied gate voltage. This Lifshitz transition, between a single occupied band at low electron density and…
We examine, by means of ab initio pseudopotential calculations, La_2/3Sr_1/3MnO_3/SrTiO_3 (LSMO/STO) heterojunctions in which one unit layer of La_(1-x)Sr_xMnO_3 (with 0<x<1) is inserted at the interface. The optimal interlayer doping x for…
The unique electronic structure found at interfaces between materials can allow unconventional quantum states to emerge. Here we observe superconductivity in electron gases formed at interfaces between (111) oriented KTaO$_3$ and insulating…
Conventional two-dimensional electron gases are realized by engineering the interfaces between semiconducting compounds. In 2004, Ohtomo and Hwang discovered that an electron gas can be also realized at the interface between large gap…
The interface between the polar LaAlO$_3$ and nonpolar SrTiO$_3$ layers has been shown to exhibit various electronic and magnetic phases such as two dimensional electron gas, superconductivity, magnetism and electronic phase separation.…
The interface of complex oxide heterostructures sets the stage for various electronic and magnetic phenomena. Many of these collective effects originate from the precise structural arrangement at the interface that in turn governs local…
We investigate the non-equilibrium insulator-metal transition driven in a SmNiO3 thin film by coherent optical excitation of the LaAlO3 substrate lattice. By probing the transient optical properties over a broad frequency range (100 - 800…
Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, $n_s$, is poorly understood. Here we derive a simple expression for the…
A superconducting phase with an extremely low carrier density of the order of 10^13 cm^-2 is present at LaAlO3-SrTiO3 interfaces. If depleted from charge carriers by means of a gate field, this superconducting phase undergoes a transition…
We use density functional theory plus dynamical mean-field theory to demonstrate the emergence of a metallic layer at the interface between the two Mott insulators LaTiO$_3$ and LaVO$_3$. The metallic layer is due to charge transfer across…