Related papers: A Piezoelectric, Strain-Controlled Antiferromagnet…
We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in…
A novel class of antiferromagnets, dubbed altermagnets, exhibit a non-relativistically spin-split band structure reminiscent of $d$-wave superconductors, despite the absence of net magnetization. This unique characteristic enables…
Spintronics-based nonvolatile components in neuromorphic circuits offer the possibility of realizing novel functionalities at low power. Current-controlled electrical switching of magnetization is actively researched in this context.…
Strain engineering is widely used to manipulate the electronic and magnetic properties of complex materials. An attractive route to control magnetism with strain is provided by the piezomagnetic effect, whereby the staggered spin structure…
Noncollinear magnetic moments in antiferromagnets (AFM) lead to a complex behavior of electrical transport, even to a decreasing resistivity due to an increasing temperature. Proper treatment of such phenomena is required for understanding…
The dynamics of a spin torque driven ferrimagnetic (FiM) system is investigated using the two-sublattice macrospin model. We demonstrate an ultrafast switching in the picosecond range. However, we find that the excessive current leads to…
Antiferromagnets that display very small stray magnetic field are ideal for spintronic applications. Of particular interest are non-collinear, chiral antiferromagnets of the type Mn3X (X=Sn, Ge), which display a large magnetotransport…
Spin-memristors are a class of materials that can store memories through the control of spins, potentially leading to novel technologies that address the constraints of standard silicon electronics, thereby facilitating the advancement of…
Antiferromagnetic spintronics is an emerging research field whose focus is on the electrical and optical control of the antiferromagnetic order parameter and its utility in information technology devices. An example of recently discovered…
Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with…
Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…
Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which exploits the N\'eel vector to control the topological electronic states and the associated spin-dependent transport properties. A recently discovered…
Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting the paramagnetic molecules across two ferromagnets (FM) electrodes of a magnetic tunnel junction (MTJ). MTJMSD provides…
The low power manipulation of magnetization is currently a highly sought-after objective in spintronics. Non ferromagnetic large spin-orbit coupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interesting elements of response…
The spin filtering effect, distinct decaying lengths experienced by oppositely spin-polarized electrons in a magnetic barrier, generally occurs in ferromagnetic (FM) insulators or semiconductors. With the rise of altermagnetic (ALM)…
Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on…
CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the…
The magnetic orientations and switching fields of a CoCrPt-Ru-CoCrPt synthetic ferrimagnet with perpendicular magnetic anisotropy have been studied in the temperature range from 2 K to 300 K. It was found that two sets of magnetic…
As computing power demands continue to grow, superconducting electronics present an opportunity to reduce power consumption by increasing the energy efficiency of digital logic and memory. A key milestone for scaling this technology is the…
Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in…