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Graphene has evolved as a platform for quantum transport that can compete with the best and cleanest semiconductor systems. Recently, many interesting local properties of carrier transport in graphene have been investigated by various…
We explore a network of electronic quantum valley Hall (QVH) states in the moir\'e crystal of minimally twisted bilayer graphene. In our transport measurements we observe Fabry-P\'erot and Aharanov-Bohm oscillations which are robust in…
Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible state to a compressible state by tuning the bandgap at a given electron density. Likewise, variation of the…
Confinement of small-gapped fractional quantum Hall states facilitates quasiparticle manipulation and is an important step towards quasiparticle interference measurements. Demonstrated here is conduction through top gate defined, narrow…
We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and…
Symmetry breaking in a quantum system often leads to complex emergent behavior. In bilayer graphene (BLG), an electric field applied perpendicular to the basal plane breaks the inversion symmetry of the lattice, opening a band gap at the…
Synthetic quantum Hall bilayer (SQHB), realized by optically driven monolayer graphene in the quantum Hall regime, provides a flexible platform for engineering quantum Hall phases as discussed in [Phys. Rev. Lett. 119, 247403]. The coherent…
We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts…
The ability to localize and manipulate individual quasiparticles in mesoscopic structures is critical in experimental studies of quantum mechanics and thermodynamics, and in potential quantum information devices, e.g., for topological…
We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition on a two-inch silicon carbide substrate. Through molecular…
Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for hightemperature quantum spin Hall (QSH) transport. Here…
Graphene and its heterostructures exhibit interesting electronic properties and are explored for quantum spin Hall effect(QSHE) and magnetism based device applications. In present work, we propose a heterostructure of graphene encapsulated…
There is a wide range of science and applications accessible via the strain engineering of quantum transport in 2D materials. We propose a realistic experimental platform for uniaxial strain engineering of ballistic charge transport in…
We compare the conductance of an undoped graphene sheet with a small region subject to an electrostatic gate potential for the cases that the dynamics in the gated region is regular (disc-shaped region) and classically chaotic (stadium).…
The extreme mechanical resilience of graphene and the peculiar coupling it hosts between lattice and electronic degrees of freedom have spawned a strong impetus towards strain-engineered graphene where, on the one hand, strain augments the…
The miniaturization of quantum Hall resistance standards (QHRS) using epitaxial graphene on silicon carbide necessitates understanding how device dimensions impact performance. This study reveals a pronounced scale-dependent carrier density…
The electronic properties of graphene are described by a Dirac Hamiltonian with a fourfold symmetry of spin and valley. This symmetry may yield novel fractional quantum Hall (FQH) states at high magnetic field depending on the relative…
Graphene nanostructures exhibit an intrinsic advantage in relation to the gate delay in three-terminal devices and provide additional benefits when operate in the quantum capacitance limit. In this paper, we developed a simple model that…
Low temperature magnetoconductance measurements were made in the vicinity of the charge neutrality point. Two origins for the fluctuations were identified close to the CNP. At very low magnetic fields there exist only mesoscopic…
Artificial graphene consisting of honeycomb lattices other than the atomic layer of carbon has been shown to exhibit electronic properties similar to real graphene. Here, we reverse the argument to show that transport properties of real…