Related papers: Superconducting quantum dot and the sub-gap states
Superconducting devices subject to strong charging energy interactions and Coulomb blockade are one of the key elements for the development of nanoelectronics and constitute common building blocks of quantum computation platforms and…
We report low-temperature transport experiments on single-wall nanotubes with metallic leads of varying contact quality, ranging from weak tunneling to almost perfect transmission. In the weak tunneling regime, where Coulomb blockade…
Doping mobile carriers into ordinary semiconductors such as Si, GaAs, and ZnO was the enabling step in the electronic and optoelectronic revolutions. The recent emergence of a class of "Quantum Materials", where uniquely quantum…
We inspect signatures of dynamical quantum phase transitions driven by two types of quenches acting on a correlated quantum dot embedded between superconducting and metallic reservoirs. Under stationary conditions the proximity induced…
We study the transient phenomena appearing in a subgap region of the double quantum dot coupled in series between the superconducting and normal metallic leads, focusing on the development of the superconducting proximity effect. For the…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
Quantum engineering requires controllable artificial systems with quantum coherence exceeding the device size and operation time. This can be achieved with geometrically confined low-dimensional electronic structures embedded within…
Superconducting circuits have become a leading quantum technology for testing fundamentals of quantum mechanics and for the implementation of advanced quantum information protocols. In this chapter, we revise the basic concepts of circuit…
We report on electrical transport measurements through a carbon nanotube quantum dot coupled to a normal and a superconducting lead. The ratio of Kondo temperature and superconducting gap $T_{K}/\Delta$ is identified to govern the transport…
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…
Quantum dots (QDs) investigated through electron transport measurements often exhibit varying, state-dependent tunnel couplings to the leads. Under specific conditions, weakly coupled states can result in a strong suppression of the…
Quantum criticality is the intriguing possibility offered by the laws of quantum mechanics when the wave function of a many-particle physical system is forced to evolve continuously between two distinct, competing ground states. This…
A new approach in the quantum theory of few-electron nanoelectronic devices -- the S-matrix approach -- is presented in a simple example: a single-electron transistor consisting of a single-level quantum dot connected with two metallic…
Coherence and scalability are essential properties of quantum systems required in quantum computers. This study presents a high coherent and scalable qubit system with atomtronics in synthetic dimensions. It is atomtronic counterpart of…
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of…
We study transport properties for a quantum dot coupled to normal leads with a pseudogap density of states at zero temperature, using the second-order perturbation theory based on the Keldysh formalism. We clarify that the hybridization…
The coherence of quantum systems is crucial to quantum information processing. While it has been demonstrated that superconducting qubits can process quantum information at microelectronics rates, it remains a challenge to preserve the…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
Electrons in a quantum-dot spin valve, consisting of a single-level quantum dot coupled to two ferromagnetic leads with magnetizations pointing in arbitrary directions, experience an exchange field that is induced on the dot by the…
We study subgap transport from a superconductor through a double quantum dot with large on-site Coulomb repulsion to two normal leads. Non-local superconducting correlations in the double dot are induced by the proximity to the…