Related papers: Engineering Topological quantum dot through planar…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
We analyze the transport properties of a double quantum dot device in the side-coupled configuration. A small quantum dot (QD), having a single relevant electronic level, is coupled to source and drain electrodes. A larger QD, whose…
Monolayer transition metal dichalcogenides (TMDs) offer new opportunities for realizing quantum dots (QDs) in the ultimate two-dimensional (2D) limit. Given the rich control possibilities of electron valley pseudospin discovered in the…
Topological insulators have remained as candidates for future electronic devices since their first experimental realization in the past decade. The existence of topologically protected edge states could be exploited to generate a robust…
We propose a novel platform for quantum many body simulations of dipolar spin models using current circuit QED technology. Our basic building blocks are 3D Transmon qubits where we use the naturally occurring dipolar interactions to realize…
We investigate theoretically the linear conductance of a two-level quantum dot as a function of the gate voltage and different strength of coupling to the external electronic system (the reservoir). Apart from the weak coupling regime,…
Edge magnetoplasmon is an emergent chiral bosonic mode promising for studying electronic quantum optics. While the plasmon transport has been investigated with various techniques for decades,its coupling to a mesoscopic device remained…
Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined…
We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by top gate technique.…
Transport through a quantum dot (QD) in the Kondo regime shows alternating regions of high and low conductance when both an external magnetic field and the gate potential controlling the depth of the QD potential are varied. We present a…
We study theoretically the two-dimensional topological electric state in a single band semiconductor with strong spin-orbit interactions under harmonic scalar electrostatic potentials. The electronic states described by the spin Landau…
In this dissertation we use sophisticated numerical methods in order to examine ground-state (GS) properties of two types of quantum systems with electron electron interactions: A quantum dot (QD) and a nano-wire. In the first half of the…
We present the density matrix approach for theoretical description of an asymmetric double quantum dot(QD)system.The results show that the properties of gain,absorption and dispersion of the double QD system ,the population of the state…
We consider quantum condensed matter systems without particle-number conservation. Since the particle number is not a good quantum number, states belonging to different particle-number sectors can hybridize, which causes topological…
We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate…
In moir\'e materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) --…
It has been demonstrated that topological quantum spin Hall (QSH) state exist in twisted bilayers of transition metal dichalcogenides. However, a comprehensive theoretical characterization of the topological edge states remains a topic of…
We propose a nanoscale device consisting of a double quantum dot with a full exchange and pair hopping interaction. In this design, the current can only flow through the upper dot, but is sensitive to the spin state of the lower dot. The…
This work presents theoretical demonstration of a carrier trap unit formed by dual topological insulator constrictions (TIC) on the HgTe/CdTe quantum well (QW) with inverted band structures. The sample of HgTe/CdTe QW is patterned into a…
We discuss the physics of a of a spin-1 quantum dot, coupled to two metallic leads and develop a simple model for the temperature dependence of its conductance. Such quantum dots are described by a two-channel Kondo model with asymmetric…