Related papers: Spin-valve Effect in Nanoscale Si-based Devices
We consider spin transport and spin relaxation in superconductors using the quasiclassical theory of superconductivity. We include spin relaxation due to spin-orbit interaction as well as magnetic impurities, and show that the energy…
The photon spin is an important resource for quantum information processing as is the electron spin in spintronics. However, for subwavelength confined optical excitations, polarization as a global property of a mode cannot be defined.…
Stochastic oscillators based on emerging nanodevices are attractive because of their ultra-low power requirement and ability to exhibit stochastic resonance, a phenomenon where synchronization to weak input signals is enabled due to ambient…
We study ballistic hole transport through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-P$\acute{e}$rot interference patterns as well as conductance plateaus at integer multiples of 2e$^2$/h at zero magnetic field.…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
Using a two-dimensional finite-differences scheme to model spin transport in silicon devices with lateral geometry, we simulate the effects of spin relaxation at interfacial boundaries, i.e. the exposed top surface and at an…
The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schr\"{o}dinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components…
Inefficient screening of electric fields in nanoconductors makes electric manipulation of electronic transport in nanodevices possible. Accordingly, electrostatic (charge) gating is routinely used to affect and control the Coulomb…
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobility measurements on silicon Hall bars. We find a peak…
We consider effects of the spin degree of freedom on the nanomechanics of a single-electron transistor (SET) containing a nanometer-sized metallic cluster suspended between two magnetic leads. It is shown that in such a…
Graphene nanoribbons and constrictions are envisaged as fundamental components of future carbon-based nanoelectronic and spintronic devices. At nanoscale, electronic effects in these devices depend heavily on the dimensions of the active…
We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…
This article reviews spin-dependent transport of carriers in homogenous three-dimensional and two-dimensional semiconductors. We begin with a discussion of optical orientation of electron spins, which allows both the creation and detection…
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…
Spin-dependent transport is investigated in ballistic regime through the interface between a ferromagnet and a spin spiral. We show that spin-dependent interferences lead to a new type of diffraction called "spin-diffraction". It is shown…
We study the influence of spin waves on transport through a single-level quantum dot weakly coupled to ferromagnetic electrodes with noncollinear magnetizations. Side peaks appear in the differential conductance due to emission and…
Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a…
We introduce the spin and momentum dependent {\em force operator} which is defined by the Hamiltonian of a {\em clean} semiconductor quantum wire with homogeneous Rashba spin-orbit (SO) coupling attached to two ideal (i.e., free of spin and…
We report a strategy to design nanoscale cold-source field-effect transistors (CS-FETs) with bias-independent sub-60 mV/dec subthreshold swing (SS). By first-principles calculations and quantum-transport simulations, we reveal that the…
The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We…