Related papers: Voltage control of the long-range p-d exchange cou…
Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To…
The exchange interaction between magnetic ions and charge carriers in semiconductors is considered as prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range $p-d$ exchange…
Stable, reproducible, scalable, addressable, and controllable hybrid superconductor-semiconductor (S-Sm) junctions and switches are key circuit elements and building blocks of gate-based quantum processors. The electrostatic field effect…
Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as…
We suggest a model of synthetic ferrimagnetic semiconductor structure based on GaAs-AlGaAs quantum well doped by two Mn delta-layers. The coupling between the delta-layers is mediated by extra holes, and can be switched between ferro- and…
Ferromagnetic transitions between quantum Hall states with different polarization at a fixed filling factor can be studied by varying the ratio of cyclotron and Zeeman energies in tilted magnetic field experiments. However, an ability to…
Exerting control of the magnetic exchange interaction in heterostructures is of both basic interest and has potential for use in spin-based applications relying on quantum effects. We here show that the sign of the exchange interaction in a…
Combining strong electron correlations [1-4] and nontrivial electronic topology [5] holds great promise for discovery. So far, this regime has been rarely accessed and systematic studies are much needed to advance the field. Here we…
Electron-mediated voltage control of exchange coupling (EM-VCEC) has been proposed as a mechanism for magnetization switching via modulation of spin-dependent electron reflection. However, its experimental verification has been challenging…
The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based…
We demonstrated the control of ferromagnetism in a surface quantum well containing a 5-nm-thick n-type ferromagnetic semiconductor (In,Fe)As layer sandwiched between two InAs layers, by manipulating the carrier wavefunction. The Curie…
Phase-tunable hybrid devices, built upon nanostructures combining normal metal and superconductors, have been the subject of intense studies due to their numerous combinations of different charge and heat transport configurations. They…
Electrical control of magnetism in a two-dimensional (2D) semiconductor is of great interest for emerging nanoscale low-dissipation spintronic devices. Here, we propose a general approach of tuning magnetic coupling and anisotropy of a van…
Magnetic semiconductor quantum dots with a few carriers represent an interesting model system where ferromagnetic interactions can be tuned by voltage. By designing the geometry of a doped quantum dot, one can tailor the anisotropic quantum…
Electrical control of spins at the nanoscale offers significant architectural advantages in spintronics, because electric fields can be confined over shorter length scales than magnetic fields. Thus, recent demonstrations of electric-field…
We present a proposal for a fully electrically controllable quantum dot based spin current injector. The device consists of a quantum dot that is strongly coupled to a ferromagnetic electrode on one side and weakly coupled to a nonmagnetic…
We propose to control of an electron-hole superfluid in semiconductor coupled quantum wells and double layers of two-dimensional (2D) material by an external periodic field. This can either be created by the gates periodically located and…
We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, which are separated by two oxide barriers sandwiching a spacer…
The exchange coupling of the spins of two electrons in double well potentials in a semiconductor background is calculated within the Heitler-London (HL) approximation. Atomic and quantum dot types of confining potentials are considered, and…
Controlling spin current and magnetic exchange coupling by applying an electric field and achieving high spin injection efficiency at the same time in a nanostructure coupled to ferromagnetic electrodes have been the outstanding challenges…