Related papers: Ground-state spin blockade in a single-molecule ju…

We consider nanojunctions in the single-electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many body spectrum. As a consequence, interference phenomena which cause a current blocking can occur at…

We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…

Spin-crossover (SCO) molecules are versatile magnetic switches with applications in molecular electronics and spintronics. Downscaling devices to the single-molecule level remains, however, a challenging task since the switching mechanism…

Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we…

Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade…

We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…

We propose a mechanism of ground-state blockade between two $N$-type Rydberg atoms in virtue of Rydberg-antiblockade effect and Raman transition. Inspired by the quantum Zeno effect, the strong Rydberg antiblockade interaction plays a role…

We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the…

We have achieved the few-electron regime in InAs nanowire double quantum dots. Spin blockade is observed for the first two half-filled orbitals, where the transport cycle is interrupted by forbidden transitions between triplet and singlet…

Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion…

We have computed the low energy quantum states and low frequency dynamical susceptibility of complex quantum spin systems in the limit of strong interactions, obtaining exact results for system sizes enormously larger than accessible…

We interpret a recent pioneering experiment [Zgirski M. et al., Phys. Rev. Lett., 106 (2011) 257003] on quasiparticle manipulation in a superconducting break junction in terms of spin blockade drawing analogy with spin qubits. We propose a…

Quantum dots and single-molecule transistors may exhibit level crossings induced by tuning external parameters such as magnetic field or gate voltage. For Coulomb blockaded devices, this shows up as an inelastic cotunneling threshold in the…

We investigate spin states of few electrons in a double quantum dot by coupling them weakly to a magnetic field resilient NbTiN microwave resonator. We observe a reduced resonator transmission if resonator photons and spin singlet states…

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…

Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…

Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensiona…

We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with…

We develop the theory of conductance of a quantum dot which carries a spin and is coupled via RKKY interaction to another spin-carrying quantum dot. The found dependence of the differential conductance on bias and magnetic field at fixed…

Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified…