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Fifteen years have passed since graphene was first isolated on the substrate from bulk graphite. During that period, 2D layered materials with intrinsic band gaps have been realized. Although many exciting results have been reported for…
Two-dimensional (2D) materials with extraordinary electrical properties, hold promising for large-scale, flexible electronics. However, their device performance could be hindered due to the excessive defects introduced via traditional…
Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the small size of mechanically exfoliated hBN flakes, electronic…
Outstanding wide-bandgap semiconductor material such as gallium nitride (GaN) has been extensively utilized in power electronics, radiofrequency amplifiers, and harsh environment devices. Due to its quantum confinement effect in enabling…
Hexagonal boron nitride (hBN)-long-known as a thermally stable ceramic-is now available as atomically smooth, single-crystalline flakes, revolutionizing its use in optoelectronics. For nanophotonics, these flakes offer strong…
2D materials and their monolayers have attracted widespread interest by virtue of their unique electronic and optical properties. In addition to their remarkable physical characteristics, their atomically thin nature enables their…
Investigation on oxidation resistance of two-dimensional (2D) materials is critical for many of their applications, because 2D materials could have higher oxidation kinetics than their bulk counterparts due to predominant surface atoms and…
Point defect qubits in semiconductors have demonstrated their outstanding high spatial resolution sensing capabilities of broad multidisciplinary interest. Two-dimensional (2D) semiconductors hosting such sensors have recently opened up new…
Two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs), black phosphorus (BP) and related derivatives, have attracted great attention due to their advantages of flexibility, strong light-matter…
The combination of h-BN and high-k dielectrics is required for a top gate insulator in miniaturized graphene field-effect transistors because of the low dielectric constant of h-BN. We investigated the deposition of Y2O3 on h-BN using…
Integrated quantum photonics (IQP) provides a path to practical, scalable quantum computation, communications and information processing. Realization of an IQP platform requires integration of quantum emitters with high quality photonic…
Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with…
Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through…
Next-generation electronics calls for new materials beyond silicon for increased functionality, performance, and scaling in integrated circuits. Carbon nanotubes and semiconductor nanowires are at the forefront of these materials, but have…
Vertical integration of two-dimensional materials has recently emerged as an exciting method for the design of novel electronic and optoelectronic devices. Using density functional theory, we investigatethe structural and electronic…
Two-dimensional semiconductors, such as monolayer transition metal dichalcogenides (TMDC), exhibit strong excitonic transitions at room temperature and offer a unique platform for exploring light-matter interactions in nanoscale photonic…
Nanostructuring materials at small scales enables control over their physical properties, revealing behaviors not observed at larger dimensions. This strategy is particularly effective in two-dimensional (2D) materials, where surface…
The emerging new paradigm of technologies, the internet of things, entails a process of device miniaturization to combine several functional components, such as sensors, actuators, and powering elements, in a single individual on-chip…
Engineering of cooling mechanisms is a bottleneck in nanoelectronics. Whereas thermal exchanges in diffusive graphene are mostly driven by defect assisted acoustic phonon scattering, the case of high-mobility graphene on hexagonal Boron…
Phonon polaritons are quasiparticles resulting from strong coupling of photons with optical phonons. Excitation and control of these quasiparticles in 2D materials offer the opportunity to confine and transport light at the nanoscale. Here,…