Related papers: All-2D Material Inkjet-Printed Capacitors: Towards…
We present a novel method to establish inner point contacts on hexagonal boron nitride (hBN) encapsulated graphene heterostructures with dimensions as small as 100 nm by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2…
The chemical activity of ionized hydrogen describes the potency of protons in solution and is used to define the pH with wide-ranging applications in biological and materials sciences. Measuring pH with graphene field-effect transistors…
Growing interest in devices based on layered van der Waals (vdW) materials is motivating the development of new nanofabrication methods. Hexagonal boron nitride (hBN) is one of the most promising materials for studies of quantum photonics…
In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…
Atomically thin boron nitride (BN) is an important two-dimensional (2D) nanomaterial, with many properties distinct from graphene. In this feature article, these unique properties and associated applications often not possible from graphene…
The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap along with its atomically flat nature without dangling bonds or interface trap states makes it…
Hexagonal Boron Nitride (h-BN) is a highly intriguing candidate for heterostructure optoelectronic applications, such as Deep Ultraviolet photodetectors, UV sensing and communication systems and solar cells. This is primarily due to its…
The integration of membranes into optical resonators plays a key role in a variety of applications, including optomechanics. If such membranes host atom-like systems, ideally with access to spin states, new roads in quantum photonics and…
We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitride (BN) sheets with complementary metal oxide semiconductor…
The excellent electronic and mechanical properties of graphene allow it to sustain very large currents, enabling its incandescence through Joule heating in suspended devices. Although interesting scientifically and promising…
The advances in the mass scale manufacturing of microscale energy storage devices via inkjet printing rely on the development of high-quality printable ink. The earth-abundant, non-toxic carbon materials such as graphene, carbon nanotube…
Insulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices. To achieve this, high-quality hBN with controlled atomic configurations…
A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is presented. The I-V characteristics intrinsic and extrinsic…
We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel…
The field of plasmonics seeks to find materials with an intensive plasmon (large plasmon pole weight) with low Landau, phonon and other losses (small decay width). In this paper we propose a new class of materials that show exceptionally…
Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapor deposition in…
Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van…
The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific…
Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room…
Large, high-quality layers of hexagonal boron nitride (hBN) are a prerequisite for further advancement in scientific investigation and technological utilization of this exceptional 2D material. Here we address this demand by investigating…