Related papers: Spin splitting and switching effect in a four-term…
Spin-polarized two-dimensional electron gas (2DEG) at oxide interfaces is an emerging physical phenomenon, which is technologically important for potential device applications. However, most previous relevant studies only focused on the…
Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information…
Plasmons in two-dimensional electron gas (2DEG) strips with grounded electrodes (a gate or side contacts) are investigated. We consider two systems: (a) the 2DEG strip with a highly conducting gate and (b) the 2DEG strip with semi-infinite…
The formation of a novel spin-polarized 2D electron gas at the LaMnO$_3$ monolayer embedded in SrMnO$_3$ is predicted from the first-principles density-functional calculations. The La (d) electrons become confined in the direction normal to…
The subbands of weakly coupled double-layer two dimensional electron gas systems consist of narrowly spaced pairs whose corresponding wavefunctions are symmetric and antisymmetric combinations of isolated layer subband wavefunctions. The…
Electron transport properties in a parallel double-quantum-dot structure with three-terminals are theoretically studied. By introducing a local Rashba spin-orbit coupling, we find that an incident electron from one terminal can select a…
We investigate theoretically the prospects for using a magnetic nanoelectromechanical single-electron tunneling (NEM-SET) device as an electronic spin filter. We find that strong magnetic exchange forces on the net spin of the mobile…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…
While the helical character of the edge channels responsible for charge transport in the quantum spin Hall regime of a two-dimensional topological insulator is by now well established, an experimental confirmation that the transport in the…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the…
We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…
We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a $98\%$) with voltage-controlled spin polarization operating at room temperature and with small operating voltage ($0.3$ V). The…
A potential scheme is proposed for realizing a two-qubit quantum gate in semiconductor quantum dots. Information is encoded in the spin degrees of freedom of one excess conduction electron of each quantum dot. We propose to use two lasers,…
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…
We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the…
We propose a novel scheme to efficiently polarize and manipulate the electron spin in a quantum dot. This scheme is based on the spin-orbit interaction and it possesses following advantages: (1) The direction and the strength of the spin…
Strong spin-orbit coupling in noncentrosymmetric materials and interfaces results in remarkable physical phenomena, such as nontrivial spin textures, which may exhibit Rashba, Dresselhaus, and other intricated configurations. This provides…
We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically…
We study the spin current injected by spin pumping into single layer graphene and the two-dimensional electron gas (2DEG) with ferromagnetic contacts using scattering theory. The spin currents pumped into graphene are very distinct from…