Related papers: A Behavioral Compact Model of 3D NAND Flash Memory
The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate…
Stochastic behaviors of resistive random access memory (RRAM) play an important role in the design of cross-point memory arrays. A Monte Carlo compact model of oxide RRAM is developed and calibrated with experiments on various device stack…
Memory disaggregation is being considered as a strong alternative to traditional architecture to deal with the memory under-utilization in data centers. Disaggregated memory can adapt to dynamically changing memory requirements for the data…
While containers efficiently implement the idea of operating-system-level application virtualization, they are often insufficient to increase the server utilization to a desirable level. The reason is that in practice many containerized…
Developing ultra-low-energy superconducting computing and fault-tolerant quantum computing will require scalable superconducting memory. While conventional superconducting logic-based memory cells have facilitated early demonstrations,…
Soft machines display shape adaptation to external circumstances due to their intrinsic compliance. To achieve increasingly more responsive behaviors upon interactions without relying on centralized computation, embodying memory directly in…
In this paper, we initiate a first information-theoretic study on multilevel NAND flash memory channels with intercell interference. More specifically, for a multilevel NAND flash memory channel under mild assumptions, we first prove that…
A low-power Content-Addressable-Memory (CAM) is introduced employing a new mechanism for associativity between the input tags and the corresponding address of the output data. The proposed architecture is based on a recently developed…
In this paper, we develop an explicit model to predict the DC electrical behavior in ultra-thin surrounding gate junctionless nanowire FET. The proposed model takes into account 2D electrical and geometrical confinements of carrier charge…
3D Gaussian Splatting (3DGS) has begun incorporating rich information from 2D foundation models. However, most approaches rely on a bottom-up optimization process that treats raw 2D features as ground truth, incurring increased…
We demonstrate a photonic circuit with integrated long-lived quantum memories. Pre-selected quantum nodes - diamond micro-waveguides containing single, stable, and negatively charged nitrogen vacancy centers - are deterministically…
Today, flash memory are strongly used in the embedded system domain. NAND flash memories are the building block of main secondary storage systems. Such memories present many benefits in terms of data density, I/O performance, shock…
With the ever-increasing amount of data generate in the world, estimated to reach over 200 Zettabytes by 2025, pressure on efficient data storage systems is intensifying. The shift from HDD to flash-based SSD provides one of the most…
The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…
Remembering where object segments were predicted in the past is useful for improving the accuracy and consistency of class-agnostic video segmentation algorithms. Existing video segmentation algorithms typically use either no object-level…
We propose binary discrete parametric channel models for multi-level cell (MLC) flash memories that provide accurate ECC performance estimation by modeling the empirically observed error characteristics under program/erase (P/E) cycling…
Prices of NAND flash memories are falling drastically due to market growth and fabrication process mastering while research efforts from a technological point of view in terms of endurance and density are very active. NAND flash memories…
This paper presents A3D, an adaptive 3D network that can infer at a wide range of computational constraints with one-time training. Instead of training multiple models in a grid-search manner, it generates good configurations by trading off…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
In this article, we introduce a new nanoscale electromechanical device -- a leaky memcapacitor -- and show that it may be useful for the hardware implementation of spiking neurons. The leaky memcapacitor is a movable-plate capacitor that…