Related papers: A Behavioral Compact Model of 3D NAND Flash Memory
Compared to planar (i.e., two-dimensional) NAND flash memory, 3D NAND flash memory uses a new flash cell design, and vertically stacks dozens of silicon layers in a single chip. This allows 3D NAND flash memory to increase storage density…
The first contribution of this paper is the development of extremely dense, energy-efficient mixed-signal vector-by-matrix-multiplication (VMM) circuits based on the existing 3D-NAND flash memory blocks, without any need for their…
This paper presents a set of models dedicated to describe a flash storage subsystem structure, functions, performance and power consumption behaviors. These models cover a large range of today's NAND flash memory applications. They are…
Raw bit errors are common in NAND flash memory and will increase in the future. These errors reduce flash reliability and limit the lifetime of a flash memory device. We aim to improve flash reliability with a multitude of low-cost…
Ferroelectric non-volatile capacitance-based memories enable non-destructive readout and low-power in-memory computing with 3D stacking potential. However, their limited memory window (1-10 fF/{\mu}m) requires material-device-circuit…
Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive…
Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by intrinsic physical and architectural limits, including…
In this work we introduce a compact model for mushroom-type phase-change memory devices that incorporates the shape and size of the amorphous mark under different programming conditions, and is applicable to both projecting and…
This work reports a compact behavioral model for gated-synaptic memory. The model is developed in Verilog-A for easy integration into computer-aided design of neuromorphic circuits using emerging memory. The model encompasses various forms…
Volatile memristors have recently gained popularity as promising devices for neuromorphic circuits, capable of mimicking the leaky function of neurons and offering advantages over capacitor-based circuits in terms of power dissipation and…
We propose a data-driven approach to modeling the spatio-temporal characteristics of NAND flash memory read voltages using conditional generative networks. The learned model reconstructs read voltages from an individual memory cell based on…
This article features extended summaries and retrospectives of some of the recent research done by our group, SAFARI, on (1) understanding, characterizing, and modeling various critical properties of modern DRAM and NAND flash memory, the…
Superconducting 3D microwave cavities offer state-of-the-art coherence times and a well controlled environment for superconducting qubits. In order to realize at the same time fast readout and long-lived quantum information storage, one can…
Two concatenated coding schemes based on fixed-rate Raptor codes are proposed for error control in NAND flash memory. One is geared for off-line recovery of uncorrectable pages and the other is designed for page error correction during the…
Machine learning-based compact models provide a rapid and efficient approach for estimating device behavior across multiple input parameter variations. In this study, we introduce two reverse-design algorithms that utilize these compact…
This paper summarizes our work on experimentally analyzing, exploiting, and addressing vulnerabilities in multi-level cell NAND flash memory programming, which was published in the industrial session of HPCA 2017, and examines the work's…
The study and modelling of planar capacitors remain highly relevant due to their broad applications. However, their accurate modelling presents significant challenges due to intrinsic high-frequency effects, which include not only parasitic…
NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology…
This paper introduces a new approach for simulating magnetic properties of nanocomposites comprising magnetic particles embedded in a non-magnetic matrix, taking into account the 3D structure of the system in which particles' positions…
Contemporary 3D research, particularly in reconstruction and generation, heavily relies on 2D images for inputs or supervision. However, current designs for these 2D-3D mapping are memory-intensive, posing a significant bottleneck for…