Related papers: Harnessing ferroelectric domains for negative capa…
The electrical resistance of a diffusive ferromagnet with magnetic domain walls is studied theoretically, taking into account the spatial dependence of the magnetization. The semiclassical domain wall resistance is found to be either…
Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer…
The significance of a negative dielectric constant has long been recognized. We report here the observation of a field-induced large negative dielectric constant of aggregates of oxide nano-particles at frequencies below ~ 1 Hz at room…
The authors have investigated magnetic domain wall induced capacitance variation as a tool for the detection of magnetic reversal in magnetic nanowires for in-plane (NiFe) and out-of-plane (Co/Pd) magnetization configurations. The switching…
Pulse-based studies of ferroelectric capacitor systems have been used by several groups to experimentally probe the mechanisms of apparent negative capacitance. In this paper, the behavior of such systems is modeled through SPICE simulation…
Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed…
Phase field modeling of domain structures in ferroelectrics nanorods of different shape and sizes is presented. The vortex domain configurations in confined ferroelectrics have been explored by varying the ratio of the energies of…
Conventionally, dc fields are used for switching dipole orientations in ferroelectrics. Such fields tilt the potential surface experienced by domain walls and thereby lower activation energies for their movement: escape from tilted…
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in…
In this work, we analyze the ferroelectric (FE) domain-wall (DW) induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks. Our analysis is based on 2D phase field…
We report on extensive domain wall motion in ferroelectric nanocapacitor arrays investigated by piezoresponse force microscopy. Under a much longer or higher bias voltage pulse, compared to typical switching pulse conditions, domain walls…
In the last decade, two revolutionary concepts in nano magnetism emerged from research for storage technologies and advanced information processing. The first suggests the use of magnetic domain walls (DWs) in ferromagnetic nanowires to…
Ferroelectric domain structure evolution induced by an external electric field was investigated by means of nematic liquid crystal (NLC) method in two strontium-barium niobate single crystals of nominal composition:…
A domain wall in a ferromagnetic one-dimensional nanowire experiences current induced motion due to its coupling with the conduction electrons. When the current is not sufficient to drive the domain wall through the wire, or it is confined…
Nanoscale electromechanical coupling provides a unique route towards control of mechanical motions and microwave fields in superconducting cavity electromechanical devices. Though their successes in utilizing the optomechanical or…
Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and devices. DWs show very different properties as compared to their bulk counterparts. Of central interest…
An oscillatory dependence of the drain current on the drain voltage is found in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a dielectric trench, which is backed by a doped silicon…
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…
Wurtzite ferroelectrics possess transformative potential for next-generation microelectronics. A comprehensive understanding of their ferroelectric properties and domain energetics is crucial for tailoring their ferroelectric…
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…