Related papers: Oxygen vacancies dynamics in redox-based interface…
Dual-layer resistive switching devices with horizontal W electrodes, vertical Pd electrodes and WOx switching layer formed at the sidewall of the horizontal electrodes have been fabricated and characterized. The devices exhibit…
In this work we report on the role of ion transport for the dynamic behavior of a double barrier quantum mechanical Al/Al$_2$O$_3$/Nb$_{\text{x}}$O$_{\text{y}}$/Au memristive device based on numerical simulations in conjunction with…
Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and…
Metal-Nb$_{2}$O$_{5-x}$-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament…
Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors since oxygen vacancies can directly determine the local conductivity in many systems. However, a recent theoretical work…
Realizing reversible reduction-oxidation (Redox) reactions of lattice oxygen in batteries is a promising way to improve the energy and power density. However, conventional oxygen absorption spectroscopy fails to distinguish the critical…
The physics underlying reset in bipolar resistive memory has been the subject of decades of controversy and has been identified as the primary barrier to resistive memory technology development. This manuscript introduces a nanoscale effect…
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…
This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the structure of ReRAM cells involves a nanoscale layer of…
Resistive random access memories are promising for non-volatile memory and brain-inspired computing applications. High variability and low yield of these devices are key drawbacks hindering reliable training of physical neural networks. In…
Artificial neuronal devices are the basic building blocks for neuromorphic computing systems, which have been motivated by realistic brain emulation. Aiming for these applications, various device concepts have been proposed to mimic the…
Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging…
Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be…
The Ovonic Phase Change Memory is critical in the quest to meet the increasing commercial needs for new information systems. The important paper of DerChang Kau et al. [1], describing a stackable cross point phase change memory, resulting…
We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…
Controlled disorder in correlated materials provides a new route to emergent stochastic dynamics in neuromorphic hardware. Here we show that focused ion beam irradiation in VO$_{2}$- and V$_{2}$O$_{3}$-based resistive-switching oscillators…
While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work,…
Memristor technologies have been rapidly maturing for the past decade to support the needs of emerging memory, artificial synapses, logic gates and bio-signal processing applications. So far, however, most concepts are developed by…