Related papers: Revised theoretical limit of subthreshold swing in…
Stefan-Boltzmann's law indicates that far-field blackbody radiation scales at the fourth power of temperature. The temperature dependence of radiative heat transfer in the near field is expected to be very different due to the contribution…
In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just…
The strange-metal phase of overdoped cuprate superconductors exhibits a linear in temperature resistivity in the low temperature, however, the origin of this remarkable anomaly is still not well understood. Here the linear temperature…
Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron…
The tremendous progress in Metal Oxide Semiconductor (MOS) technology has been a direct consequence of device scaling for past several decades. But as we have entered the nanometer era many problems related to leakage currents and other…
We report a detailed analytic and numerical study of electronic thermal conductivity in d-wave superconductors. We compare theory of the cross over at low temperatures from T-dependence to T^3-dependence for increasing temperature with…
Tunnel field effect transistors (TFETs) utilizing semiconductor heterojunctions have shown promise for low energy logic but presently do not display subthreshold swings steeper than the room-temperature thermal limit of 60 mV/decade. These…
The role of electron-phonon scattering in finite-temperature anomalous Hall effect is still poorly understood. In this work, we present a Boltzmann theory for the side-jump contribution from electron-phonon scattering, which is derived from…
This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes.…
It is shown that a ferroelastic lattice distortion is associated with the superconducting transition both in low- and high-temperature superconductors. In layered tetragonal superconductors with a sufficiently high transition temperature, a…
The paraconductivity, originating from critical superconducting order-parameter fluctuations in the vicinity of the critical temperature in a layered superconductor is calculated in the frame of the self-consistent Hartree approximation,…
We investigate the Hall effect and the magnetoresistance of strongly correlated electron systems using the dynamical mean-field theory. We treat the low- and high-temperature limits analytically and explore some aspects of the…
Temperature dependence of the magnetization of the Haldane spin chain at finite magnetic field is analyzed systematically. Quantum Monte Carlo data indicates a clear minimum of magnetization as a function of temperature in the gapless…
The spin susceptibility of noncentrosymmetric superconductors is studied when the gap function has line nodes. As examples, d-wave states, where the gap function has an additional odd-parity phase factor, are examined. The curve of the spin…
We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb…
Novel devices such as tunneling field-effect transistors (FETs) and ferroelectric FETs have been demonstrated to break the subthreshold swing (SS) limit with sub-60 mV/decade switching for further low voltage/low power applications. In this…
For a non-interacting Bose gas on a lattice we compute the shift of the critical temperature for condensation when random-bond and onsite disorder are present. We evidence that the shift depends on the space dimensionality D and the filling…
This paper presents the temperature dependence of the static spin susceptibility at $\mathbf{q} = (\pi, \pi)$ and $\mathbf{q} = (\pi, 0)$ in a Mott-proximate cuprate model with an antinodal pseudogap -- a model system for high-temperature…
In semiconductor electronics, the field-effect refers to the control of electrical conductivity in nanoscale devices, which underpins the field-effect transistor, one of the cornerstones of present-day semiconductor technology. The effect…
For a superconductor to be able to receive an external magnetic field, there must be a vacant energy state in the superconductor to receive the energy associated with the field. For a small range of energies near that of the critical…