Related papers: Enhanced Rashba spin-orbit coupling in core-shell …
We use $\vec{k}\cdot\vec{p}$ theory to estimate the Rashba spin-orbit coupling (SOC) in large semiconductor nanowires. We specifically investigate GaAs- and InSb-based devices with different gate configurations to control symmetry and…
The Rashba spin-orbit coupling arising from structure inversion asymmetry couples spin and momentum degrees of freedom providing a suitable (and very intensively investigated) environment for spintronic effects and devices. Here we show…
A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin orbit interaction. Here, we demonstrate the generation and…
We use the $\mathbf{k} \cdot \mathbf{p}$ theory and the envelope function approach to evaluate the Rashba spin-orbit coupling induced in a semiconductor nanowire by a magnetic field at different orientations, taking explicitely into account…
Spin-orbit interaction accounts for the coupling of momentum and spin degrees of freedom of electrons and holes in semiconductor materials. In quantum information processing, it allows for electrical control of spin states and for the…
We study the effect of anisotropy of the Rashba coupling on the extrinsic spin Hall effect due to spin-orbit active adatoms on graphene. In addition to the intrinsic spin-orbit coupling, a generalized anisotropic Rashba coupling arising…
A novel method and nanodevice are introduced that allows to rotate the single electron spin confined in a gated electrostatic InSb nanowire quantum dot. Proposed method does not require application of any (oscillating or static) external…
We study the effect of the Rashba spin-orbit coupling on the Fermi arcs of topological Dirac semimetals. The Rashba coupling is induced by breaking the inversion symmetry at the surface. Remarkably, this coupling could be enhanced by the…
We use spin- and angle-resolved photoemission spectroscopy (SARPES) combined with polarization-variable laser and investigate the spin-orbit coupling effect under interband hybridization of Rashba spin-split states for the surface alloys…
We consider the Higgs mode at nonzero momentum in superconductors and demonstrate that in the presence of Rashba spin-orbit coupling, it couples linearly with an external exchange field. The Higgs-spin coupling dramatically modifies the…
The experimental assessment of the strength ($\alpha_R$) of the Rashba spin-orbit coupling is rather indirect and involves the measurement of the spin relaxation length from magnetotransport, together with a model of weak antilocalization.…
The Rashba effect, which plays a crucial role in fundamental materials physics and potential spintronics applications, has been engineered in diverse systems, including semiconductor quantum wells, oxide heterostructures, metallic surfaces,…
As nanomagnetic devices scale to smaller sizes, spin-orbit coupling due to the broken structural inversion symmetry at interfaces becomes increasingly important. Here we study interfacial spin-orbit coupling effects in magnetic bilayers…
We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very…
In this study, we investigate the spin susceptibility in the superconducting state of a multilayer system with a layer-dependent Rashba spin-orbit coupling, representing a locally non-centrosymmetric superconductor. We show that the charge…
The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new…
The Rashba effect as an electrically tunable spin-orbit interaction is the base for a multitude of possible applications such as spin filters, spin transistors, and quantum computing using Majorana states in nanowires. Moreover, this…
The spin-orbit coupling (SOC) in semiconductors is strongly influenced by structural asymmetries, as prominently observed in bulk crystal structures that lack inversion symmetry. Here, we study an additional effect on the SOC: the asymmetry…
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by…
We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform…