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The synapse is a key element of neuromorphic computing in terms of efficiency and accuracy. In this paper, an optimized current-controlled memristive synapse circuit is proposed. Our proposed synapse demonstrates reliability in the face of…
Phase-change memory (PCM) devices have multiple banks to serve memory requests in parallel. Unfortunately, if two requests go to the same bank, they have to be served one after another, leading to lower system performance. We observe that a…
The rapid development of multi-core system and increase of data-intensive application in recent years call for larger main memory. Traditional DRAM memory can increase its capacity by reducing the feature size of storage cell. Now further…
Despite the impressive search rate of one key per clock cycle, the update stage of a random-access-memory-based content-addressable-memory (RAM-based CAM) always suffers high latency. Two primary causes of such latency include: (1) the…
3D point cloud neural networks have significantly enhanced the perceptual capabilities of resource-limited mobile intelligent systems. However, despite the transformative impact, the point cloud algorithm suffers from substantial memory…
PCM is a popular backing memory for DRAM main memory in tiered memory systems. PCM has asymmetric access energy; writes dominate reads. MLC asymmetry can vary by an order of magnitude. Many schemes have been developed to take advantage of…
Readout noise is a critical parameter for characterizing the performance of charge-coupled devices (CCDs), which can be greatly reduced by the correlated double sampling (CDS) circuit. However, conventional CDS circuit inevitably introduces…
Processing-in-memory (PIM) architectures have demonstrated great potential in accelerating numerous deep learning tasks. Particularly, resistive random-access memory (RRAM) devices provide a promising hardware substrate to build PIM…
This letter analyzes the scaling property of nanowire (NW) phase change memory (PCM) using analytic and numerical methods. The scaling scenarios of the three widely-used NW PCM peration schemes (constant electric field, voltage, and…
Bayesian Neural Networks (BNNs) can overcome the problem of overconfidence that plagues traditional frequentist deep neural networks, and are hence considered to be a key enabler for reliable AI systems. However, conventional hardware…
Recent development in memory technologies has introduced Spin-Transfer Torque Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip cache memories. Besides its lower leakage power, higher density, immunity to…
Compute in-memory (CIM) is a promising technique that minimizes data transport, the primary performance bottleneck and energy cost of most data intensive applications. This has found wide-spread adoption in accelerating neural networks for…
Phase Change Memory (PCM) is an attractive candidate for main memory as it offers non-volatility and zero leakage power, while providing higher cell densities, longer data retention time, and higher capacity scaling compared to DRAM. In…
Memristor crossbar arrays have emerged as a key component for next-generation non-volatile memories, artificial neural networks, and analog in-memory computing (IMC) systems. By minimizing data transfer between the processor and memory,…
With an increasing high penetration of solar photovoltaic generation in electric power grids, voltage phasors and branch power flows experience more severe fluctuations. In this context, probabilistic power flow (PPF) study aims at…
Resistive random-access memory is one of the most promising candidates for the next generation of non-volatile memory technology. However, its crossbar structure causes severe "sneak-path" interference, which also leads to strong inter-cell…
Spiking neural networks (SNNs) are being explored in an attempt to mimic brain's capability to learn and recognize at low power. Crossbar architecture with highly scalable Resistive RAM or RRAM array serving as synaptic weights and neuronal…
The attention mechanism requires huge computational efforts to process unnecessary calculations, significantly limiting the system's performance. Researchers propose sparse attention to convert some DDMM operations to SDDMM and SpMM…
Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…
Designing superconducting electronic devices involves a careful study of all the elements in the circuit, including the superconducting bias leads, however, the effect of the bias current leads on the performance of the device have not been…