Related papers: Miniaturized high-frequency sine wave gating InGaA…
Silicon Photomultipliers (SiPMs) are the state-of-the-art technology in single-photon detection with solid-state detectors. Single Photon Avalanche Diodes (SPADs), the key element of SiPMs, can now be manufactured in CMOS processes,…
Dark count rate is one of the key parameters limiting the performance of the superconducting nanowire single photon detector (SNSPD). We have designed a multi-layer film bandpass filter that can be integrated onto the SNSPD to suppress the…
Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum…
High-resolution infrared imagers are currently more expensive than CMOS and CCD cameras, due to costly sensor arrays. Van der Waals (vdWs) materials present an opportunity for low-cost, room temperature infrared photodetectors. Although…
III V semiconductor nanowire based photodetectors have significant potential for remote sensing and LiDAR applications, particularly due to their ability to operate at 1.55 {\mu}m. Achieving room temperature operation and near unity…
Detecting single photons is essential for applications such as dark matter detection, quantum science and technology, and biomedical imaging. Superconducting nanowire single-photon detectors (SNSPDs) excel in this task due to their…
This paper describes the construction of a cryostat and an optical system with a free-space coupling efficiency of 56.5% +/- 3.4% to a superconducting nanowire single-photon detector (SNSPD) for infrared quantum communication and spectrum…
Time-resolved single photon imaging is a promising imaging modality characterized by the unique capability of timestamping the arrivals of single photons. Single-Photon Avalanche Diodes (SPADs) are the leading technology for implementing…
Because of the ultra-low photon energies in the mid-infrared and terahertz frequencies, in these bands photodetectors are notoriously underdeveloped, and broadband single photon detectors (SPDs) are non-existent. Advanced SPDs exploit…
Subwavelength gratings play a fundamental and pivotal role in numerous science and applications for wave manipulation, exhibiting distinctive features such as filtering, phase manipulation, and anti-reflection. However, conventional…
In this work, we present a capacitively coupled GaAs p +-i-n/substrate photodetector (CC-GaAs PIN/S PD), which also represents a preliminary step toward 3D detection (x, y, time) of high-energy X-ray pulses. Although the final 3D detector…
Advances in silicon (Si) photonics at submicrometer wavelengths are unlocking new opportunities to realize miniaturized, scalable optical systems for biophotonics, quantum information, imaging, spectroscopy, and displays. Addressing this…
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth…
We present a novel structured light technique that uses Single Photon Avalanche Diode (SPAD) arrays to enable 3D scanning at high-frame rates and low-light levels. This technique, called "Single-Photon Structured Light", works by sensing…
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting…
We propose a characterization method for the overall detection efficiency, afterpulse and dark count probabilities of single-photon counting modules in real-time with simple instrumentation. This method can be applied when the module is…
This paper presents the design, fabrication, and experimental characterization of monolithically integrated p-n junction InGaN/GaN multiple quantum well diodes (MQWDs) and suspended waveguides. Suspended MQWDs can be used as transmitters…
In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the…
We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo0.75Ge0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1…
Traditional CMOS sensors suffer from restricted dynamic range and sub optimal performance under extreme lighting conditions. They are affected by electronic noise in low light conditions and pixel saturation while capturing high…