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Physics based numerical simulation has been carried out to probe the sub-gap density of states (DOS) and underlying electron transport properties of amorphous oxide based thin film transistors (TFTs). The DOS model of TFTs consists of…
Due to its corrugated hexagonal lattice structure, Black phosphorus (BP) has unique anisotropic physical properties, which provides an additional freedom for designing devices. Many body interactions, including interactions with phonon, is…
We review the basic optical, electronic, optoelectronic, thermoelectric and mechanical properties of few-layer black phosphorus (BP), a layered semiconductor that can be exfoliated from bulk BP, the most stable allotrope of phosphorus. The…
We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture…
Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be…
Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is…
We present a compact physics-based model of the current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and radio-frequency applications where bandgap engineering of graphene could be not…
We explore the possibility of using van dar Waals bonded heterostructures of stacked together 2D bilayer black phosphorus (BP) for nanoscale device applications. The electronic property of BP in AA stacking and 90{\deg} twisted is studied…
We provide a tight-binding model parametrization for black phosphorus (BP) with an arbitrary number of layers. The model is derived from partially self-consistent $GW_0$ approach, where the screened Coulomb interaction $W_0$ is calculated…
The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…
In this study, a model of a Schottky-barrier carbon nanotube field- effect transistor (CNT-FET), with ferromagnetic contacts, has been developed. The emphasis is put on analysis of current-voltage characteristics as well as shot (and…
Black phosphorus (BP) is an emerging two-dimensional semiconducting material with great potential for nanoelectronic and nanophotonic applications, especially owing to its unique anisotropic electrical and optical properties. Many…
We report the anisotropic magneto-transport measurement on a non-compound band semiconductor black phosphorus (BP) with magnetic field B up to 16 Tesla applied in both perpendicular and parallel to electric current I under hydrostatic…
As an emerging single elemental layered material with a low symmetry in-plane crystal lattice, black phosphorus (BP) has attracted significant research interest owing to its unique electronic and optoelectronic properties, including its…
High-performance infrared photodetection underpins various applications spanning surveillance, environmental monitoring, optical communications and biomedical imaging. However, conventional bulk detectors remain limited by poor spectral…
Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based…
The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or…
The origin of phonon thermal Hall Effect (THE) observed in a variety of insulators is yet to be identified. Here, we report on the observation of a thermal Hall conductivity in a non-magnetic elemental insulator, with an amplitude exceeding…
We investigate the electro-optic properties of black phosphorus (BP) thin films for optical modulation in the mid-infrared frequencies. Our calculation indicates that an applied out-of-plane electric field may lead to red-, blue-, or…
Schottky barrier field-effect transistors (SBFETs) based on few and mono layer phosphorene are simulated by the non-equilibrium Green's function formalism. It is shown that scaling down the gate oxide thickness results in pronounced…