Related papers: Quantum electron transport in ohmic edge contacts …
We present a simple model for electron transport in semiconductor devices that exhibit tunneling between the conduction and valence bands. The model is derived within the usual Bloch-Wannier formalism by a k-expansion, and is formulated in…
Certain fractional quantum Hall edges have been predicted to undergo quantum phase transitions which reduce the number of edge channels and at the same time bind electrons together. However, detailed studies of experimental signatures of…
In this thesis we study electron transport through magnetic nanocontacts and nanowires with ab initio quantum transport calculations. The aim is to gain a thorough understanding of the interplay between electrical conduction and magnetism…
We present exact results for the electronic transport properties of graphene sheets connected to two metallic electrodes. Our results, obtained by transfer-matrix methods, are valid for all sheet widths and lengths. In the limit of large…
We perform first-principles calculations of electron transport across a nickel-graphene interface. Four different geometries are considered, where the contact area, graphene and nickel surface orientations and the passivation of the…
In transport experiments the quantum nature of matter becomes directly evident when changes in conductance occur only in discrete steps, with a size determined solely by Planck's constant h. The observations of quantized steps in the…
We have investigated electron transport in a quasi-one dimensional (quasi-1D) electron gas as a function of the confinement potential. At a particular potential configuration, and electron concentration, the ground state of a 1D quantum…
Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental…
Atomically thin two-dimensional (2D) materials are promising candidates for sub-10 nm transistor channels due to their ultrathin body thickness, which results in strong electrostatic gate control. Properly scaling a transistor technology…
The sp3d5s*-spin-orbit-coupled atomistic tight-binding (TB) model is used for the electronic structure calculation of Si nanowires (NWs), self consistently coupled to a 2D Poisson equation, solved in the cross section of the NW. Upon…
A model to describe electronic correlations in energy bands is considered. The model is a generalization of the conventional Hubbard model that allows for the fact that the wavefunction for two electrons occupying the same Wannier orbital…
Nonlinear transport phenomena in condensed matter reflect the geometric nature, quantum coherence, and many-body correlation of electronic states. Electric currents in solids are classified into (i) Ohmic current, (ii) supercurrent, and…
The electron velocity-electric field characteristics in short channel length (50-100 nm) amorphous oxide field-effect transistors (FETs) are described using measured experimental data from indium gallium zinc oxide (IGZO) FETs in…
Atomically thin MoS2 has recently emerged as a very attractive material for nanoscale optoelectronic devices. While n-type transport in MoS2 devices has been demonstrated, hole conduction has been more challenging. Here we show…
We investigate the quantum transport dynamics of electrons in a multi-path Aharonov-Bohm interferometer comprising several parallel graphene nanoribbons. At low magnetic field strengths, the conductance displays a complex oscillatory…
We present a trajectory-resolved framework for charge transport in graphene and related two-dimensional carbon systems beyond the ideal ballistic and fully coherent limits. Transport is described by kinetic Monte Carlo hopping on a…
The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors (FETs) is evaluated across different carbon nanotube and nanowire device…
Particle transport and localization phenomena in condensed-matter systems can be modeled using a tight-binding lattice Hamiltonian. The ideal experimental emulation of such a model utilizes simultaneous, high-fidelity control and readout of…
The development of two-dimensional (2D) transition metal dichalcogenides (TMDs) based transistors has been constrained by high contact resistance and inadequate current delivery, primarily stemming from metal-induced gap states and Fermi…
We present a plane wave/pseudopotential implementation of the method to calculate electron transport properties of nanostructures. The conductance is calculated via the Landauer formula within formalism of Green's functions. Nonorthogonal…