Related papers: Single-Spin Relaxation in a Synthetic Spin-Orbit F…
We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum $T_1$ of $1.4~\text{ms}$,…
Controlling electron spins in double quantum dots allows individual electrons to be trapped and manipulated for next-generation solid-state qubit devices. In this paper, the study analyzes spin relaxation due to deformation potentials of…
We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their…
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that…
We present a microscopic analysis of electron spin dynamics in the presence of an external magnetic field for non-centrosymmetric semiconductors in which the D'yakonov-Perel' spin-orbit interaction is the dominant spin relaxation mechanism.…
We have measured temperature ($T$)- and power-dependent electron spin resonance in bulk single-wall carbon nanotubes to determine both the spin-lattice and spin-spin relaxation times, $T_1$ and $T_2$. We observe that $T_1^{-1}$ increases…
In a GaAs single quantum dot, the relaxation time T_{1} between spin triplet and singlet states has been measured for the last few even number of electrons. The singlet-triplet energy separation E_{ST} is tuned as a control parameter for…
It is proposed that the observed small (100 ps) spin relaxation time in graphene is due to resonant scattering by local magnetic moments. At resonances, magnetic moments behave as spin hot spots: the spin-flip scattering rates are as large…
The nuclear spin-lattice relaxation time ($T_1$) of lanthanum and aluminum nuclei in a single crystal of lanthanum aluminate doped with neodymium ions is studied to estimate the feasibility of the dynamically polarized lanthanum target…
We predict "intrinsic" spin relaxation times ($T_{1}$) of graphite due to spin-orbit-phonon interaction, i.e., the combination of spin-orbit coupling and electron-phonon interaction, using our developed first-principles density-matrix…
We study decoherence of an electron spin qubit in a quantum dot due to charge noise. We find that at the lowest order, the pure dephasing channel is suppressed for both $1/f$ charge noise and Johnson noise, so that charge noise leads to a…
Spin relaxation between the two lowest-lying spin-states has been studied in the S=4 single molecule magnet Ni$_4$ under steady state conditions of low amplitude and continuous microwave irradiation. The relaxation rate was determined as a…
Electron spin oriented along an external magnetic field is subject to longitudinal spin relaxation with characteristic time $T_1$. The corresponding decay is nonoscillating, so one cannot readily ascribe $T_1$ to a certain $g$ factor. This…
Magnetic resonance with ensembles of electron spins is nowadays performed in frequency ranges up to 240 GHz and in corresponding magnetic fields of up to 10 T. However, experiments with single electron and nuclear spins so far only reach…
We study the relaxation of a single electron spin in a circular quantum dot in a transition-metal dichalcogenide monolayer defined by electrostatic gating. Transition-metal dichalcogenides provide an interesting and promising arena for…
In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a…
We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the…
Spin/magnetisation relaxation and coherence times, respectively T_1 and T_2, initially defined in the context of nuclear magnetic resonance (NMR), are general concepts applicable to a wide range of systems, including quantum bits [1-4]. At…
We present an experimental study of the longitudinal electron-spin relaxation time (T1) of negatively charged nitrogen-vacancy (NV) ensembles in diamond. T1 was studied as a function of temperature from 5 to 475 K and magnetic field from 0…
Uniaxial compressive strain along the [001] direction strongly suppresses the spin relaxation in silicon. When the strain level is large enough so that electrons are redistributed only in the two valleys along the strain axis, the dominant…