Related papers: Extreme Broadband Transparent Optical Phase Change…
Phase-change material (PCM)-based non-volatile multilevel phase shifters are key components in photonic integrated circuits. Electrically, multiple phase levels can be encoded by controlling the heater power and employing different…
Here we report the discovery of superconductivity in multiple phases of the compressed GeSb2Te4 (GST) phase change memory alloy, which has attracted considerable attention for the last decade due to its unusual physical properties with many…
Phase-change materials of the (GeTe)n (Sb2Te3) (GST) system are of high relevance in memory storage and energy conversion applications due to their fast-switching speed, high data retention, and tunable properties. Here, we report on a fast…
Cadmium telluride (CdTe), lead sulfide (PbS), and indium tin oxide (ITO) play crucial roles in various electronic applications where laser treatment enables precise modification of their distinctive electronic characteristics. This study…
Most properties of solid materials are defined by their internal electric field and charge density distributions which so far are difficult to measure with high spatial resolution. Especially for 2D materials, the atomic electric fields…
We present a hybrid device platform for creating an electrically reconfigurable metasurface formed by the integration of plasmonic nanostructures with phase-change material germanium antimony telluride (GST). By changing the phase of GST…
We report on low-temperature photoconductivity (PC) in n-PbTe(Ga) epitaxial films prepared by the hot-wall technique on <111>-BaF_2 substrates. Variation of the substrate temperature allowed us to change the resistivity of the films from…
Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit…
We report a tunable optical filter based on phase change material $Ge_{2}Sb_{2}Te_{5}$ embedded in a silicon microring resonator. The high thermo-optic coefficient of $Ge_{2}Sb_{2}Te_{5}$ in amorphous phase enables tuning of resonance…
The rapid advancement of communication technology necessitates the development of hybrid optical modulators that integrate silicon photonics with electro-optic (EO) materials to enable ultrafast, low-power, and compact photonic devices.…
The development of optical metamaterials has resulted in the demonstration of remarkable physical properties, including cloaking, optical magnetism, and negative refraction. The latter has attracted particular interest, mainly because of…
Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…
The scaling of active photonic devices to deep-submicron length-scales has been hampered by the fundamental diffraction limit and the absence of materials with sufficiently strong electro-optic effects. Here, we demonstrate a solid state…
Chalcogenide alloys are materials of interest for optical recording and non-volatile memories. We perform ab-initio molecular dynamics simulations aiming at shading light onto the structure of amorphous Ge2Sb2Te5 (GST), the prototypical…
Bragg gratings offer high-performance filtering and routing of light on-chip through a periodic modulation of a waveguide's effective refractive index. Here, we model and experimentally demonstrate the use of Sb2Se3, a nonvolatile and…
Active control and manipulation of electromagnetic waves are highly desirable for advanced photonic device technology, such as optical cloaking, active camouflage and information processing. Designing optical resonators with high…
All-optical ultrafast switches enabled by artificial materials are considered at the forefront of the next generation of photonic communications and data processing. During the last two decades, the photonic applications, impact, and…
The two-dimensional (2D) bulk photovoltaic effect (BPVE) is a cornerstone for future highly efficient 2D solar cells and optoelectronics. The ferromagnetic semiconductor 2H-FeCl2 is shown to realize a new type of BPVE in which spatial…
Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the powerful combination of precise material synthesis and angle resolved photoelectron spectroscopy, we show evidence…