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Related papers: Point Defects and Localized Excitons in 2D WSe2

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Semiconducting transition metal dichalcogenides (TMDs) are desired as active materials in optoelectronic devices due to their strong excitonic effects. They can be exfoliated from their parent layered materials with low-cost and for mass…

Lattices of odd-layered two-dimensional (2D) transition metal dichalcogenides (TMDs) such as WSe2 are non-centrosymmetric, and thus could possess linear piezoelectricity that is attractive for applications such as nanoelectromechanical…

Materials Science · Physics 2018-08-10 Ehsan Nasr Esfahani , Terrance Li , Bevin Huang , Xiaodong Xu , Jiangyu Li

Optical quantum emitters are a key component of quantum devices for metrology and information processing. In particular, atomic defects in 2D materials can operate as optical quantum emitters that overcome current limitations of…

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered a key materials class to scale microelectronics to the ultimate atomic level. The robust quantum properties in TMDs also enable new device concepts…

Materials Science · Physics 2021-10-11 Joshua A. Robinson , Bruno Schuler

This article explores the recent advancements in atomically thin two-dimensional transition metal dichalcogenides (2D TMDs) and their potential applications in various fields, including nanoelectronics, photonics, sensing, energy storage,…

Materials Science · Physics 2025-09-17 Mitesh B. Solanki , Margi Jani

Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW)…

Mesoscale and Nanoscale Physics · Physics 2020-08-04 Jaydeep Joshi , Tong Zhou , Sergiy Krylyuk , Albert V. Davydov , Igor Zutic , Patrick M. Vora

The time-resolved angle-resolved photoemission spectra of WSe$_2$, a paradigmatic transition metal dichalcogenide, are dominated by a transient signal that, after being initially observed in the gap at the K valley, scatters, on an…

Materials Science · Physics 2026-04-09 Kai Wu , Michele Puppin , Andrea Marini

We employ a first-principles computational workflow to screen for optically accessible, high-spin point defects in wide band gap two-dimensional (2D) crystals. Starting from an initial set of 5388 point defects, comprising both intrinsic…

Materials Science · Physics 2023-06-07 A. Sajid , F. Nilsson , S. Manti , F. Bertoldo , J. J. Mortensen , K. S. Thygesen

Defects usually play an important role in tuning and modifying various properties of semiconducting or insulating materials. Therefore we study the impact of point and line defects on the electronic structure and optical properties of MoS2…

Mesoscale and Nanoscale Physics · Physics 2017-04-26 Jens Kunstmann , Tsegabirhan B. Wendumu , Gotthard Seifert

High energy (C, D) excitons possess remarkable influence over the optical properties of layered transition metal dichalcogenides (TMDCs) and comprehensive understanding of these may have revolutionary effect on 2D opto-electronic devices.…

Two-dimensional (2D) post-transition metal chalcogenides (PTMC) have attracted attention due to their suitable band gaps and lower exciton binding energies, making them more appropriate for electronic, optical and water-splitting devices…

Materials Science · Physics 2020-10-22 Daniel Wines , Kayahan Saritas , Can Ataca

Chalcogen vacancies in the semiconducting monolayer transition-metal dichalcogenides (TMDs) have frequently been invoked to explain a wide range of phenomena, including both unintentional p-type and n-type conductivity, as well as sub-band…

Materials Science · Physics 2024-02-27 Shoaib Khalid , Bharat Medasani , John L. Lyons , Darshana Wickramaratne , Anderson Janotti

Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions.…

The exploration for novel two-dimensional (2D) materials with diverse electronic characteristics has attracted growing interest in recent years. Using density functional theory (DFT) calculations, we have predicted a new family of 2D…

Materials Science · Physics 2025-05-06 Yasin Yekta , Hamidreza Ramezani , Hanif Hadipour , Seyed Akbar Jafari

Intrinsic and extrinsic disorder from lattice imperfections, substrate and environment has a strong effect on the local electronic structure and hence the optical properties of atomically thin transition metal dichalcogenides that are…

Monolayers of transition metal dichalcogenide materials emerged as a new material class to study excitonic effects in solid state, since they benefit from enormous coulomb correlations between electrons and holes. Especially in WSe2, sharp…

Two-dimensional (2D) transition metal dichalcogenide (TMD) materials have versatile electronic and optical properties. TMD nanoribbons show interesting properties due to reduced dimensionality, quantum confinement, and edge states. Tang et…

Materials Science · Physics 2023-06-16 Santosh Neupane , Hong Tang , Adrienn Ruzsinszky

Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding…

Using first-principles electronic structure calculations we identify the anion vacancies in II-VI and chalcopyrite Cu-III-VI2 semiconductors as a class of intrinsic defects that can exhibit metastable behavior. Specifically, we predict…

Materials Science · Physics 2009-11-11 S. Lany , A. Zunger

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined…

Mesoscale and Nanoscale Physics · Physics 2015-10-28 Xiang-Xiang Song , Di Liu , Vahid Mosallanejad , Jie You , Tian-Yi Han , Dian-Teng Chen , Hai-Ou Li , Gang Cao , Ming Xiao , Guang-Can Guo , Guo-Ping Guo
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