Related papers: Nonlinear Electrical Spin Conversion in a Biased F…
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency.…
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…
We describe a nonlinear interaction between charge currents and spin currents which arises from the energy dependence of the conductivity. This allows nonmagnetic contacts to be used for measuring and controlling spin signals. We choose…
Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin…
We study spin transport in a fully hBN encapsulated monolayer-graphene van der Waals (vdW) heterostructure, at room temperature. A top-layer of bilayer-hBN is used as a tunnel barrier for spin-injection and detection in graphene with…
We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which…
Theory of electrical spin injection from a ferromagnetic (FM) metal into a normal (N) conductor is presented. We show that tunnel contacts (T) can dramatically increase spin injection and solve the problem of the mismatch in the…
We theoretically investigate inelastic transport through anisotropic magnetic molecules weakly coupled to one ferromagnetic and one nonmagnetic lead. We find that the current is suppressed over wide voltage ranges due to spin blockade. In…
Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque…
Employing electron spin instead of charge to develop spintronic devices holds the merits of low-power consumption in information technologies. Meanwhile, the demand for increasing speed in spintronics beyond current CMOS technology has…
Results of theoretical study of spin-polarized tunneling in ferromagnet/superconductor junctions are presented. Spin and charge currents are calculated as a function of applied voltage and spin polarization in a ferromagnet. The model takes…
Spin-charge conversion via spin-orbit interaction is one of the core concepts in the current spintronics research. The efficiency of the interconversion between charge and spin current is estimated based on Berry curvature of Bloch…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle…
Electric control of spins has been a longstanding goal in the field of solid state physics due to the potential for increased efficiency in information processing. This efficiency can be optimized by transferring spintronics to the atomic…
Electronic transport through a single-wall metallic carbon nanotube weakly coupled to one ferromagnetic and one nonmagnetic lead is analyzed in the sequential tunneling limit. It is shown that both the spin and charge currents flowing…
Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in…
We describe the coherent interaction between a defect spin at the interface of a ferromagnet and a non-magnetic material, under bias and when the magnetization of the ferromagnetic contact precesses during ferromagnetic resonance. The…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even at moderate spin injection coefficients of the contact when…