Related papers: Tuning a binary ferromagnet into a multi-state syn…
Resonant activation of a synthetic antiferromagnet (SAF) is known to result in a dynamic running state, where the SAF's symmetric spin-flop pair continuously rotates between the two antiparallel ground states of the system, with the two…
Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…
Synergizing altermagnetism and other ferroic orders, such as ferroelectric switchable altermagnetism [Phys. Rev. Lett. 134, 106801 (2025) and ibid. 106802 (2025)], offers an effective route to achieve nonvolatile switching of altermagnetic…
Spin amplification is one of the most critical challenges for spintronics and spin-based logic in order to achieve spintronic circuits with fan-out. We propose a new concept for spin amplification that will allow a small spin current in a…
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements…
Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to…
Synaptic plasticity, the dynamic tuning of signal transmission strength between neurons, serves as a fundamental basis for memory and learning in biological organisms. This adaptive nature of synapses is considered one of the key features…
The magnetic reversal by spin-polarized current of a magnetic junction consisting of two ferromagnetic layers and a nonmagnetic spacer in between is considered. Initially, the free layer is magnetized antiparallel to the pinned layer by an…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy…
Among various types of neuromorphic devices towards artificial intelligence, the electrochemical synaptic transistor emerges, in which the channel conductance is modulated by the insertion of ions according to the history of gate voltage…
Perpendicular exchange bias (EB), which combines the perpendicular magnetic anisotropy and the ferromagnetic (FM) - antiferromagnetic (AFM) exchange coupling, is extremely important in the high-density AFM spintronics. However, the…
Strong ferromagnetic interlayer exchange couplings $J$ in perpendicularly magnetized systems are becoming increasingly desirable for applications. We study whether ferromagnetic interlayer exchange couplings can be measured by a combination…
Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood…
Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultra-high-density information storage. Here, we propose to build multistates by combining…
Composite multiferroics, heterostructures of ferromagnetic (FM) and ferroelectric (FE) materials, are characterized by a remarkable magnetoelectric effect at the interface. Previous work has supported the ferromagnetic structure with…
Present day computers expend orders of magnitude more computational resources to perform various cognitive and perception related tasks that humans routinely perform everyday. This has recently resulted in a seismic shift in the field of…
Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of…
Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorphic computing. The tunneling electroresistance (TER) is…
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and…