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We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For M = Mo, Cr, W;…

Mesoscale and Nanoscale Physics · Physics 2014-03-05 Ning Lu , Hongyan Guo , Lei Li , Jun Dai , Lu Wang , Wai-Ning Mei , Xiaojun Wu , Xiao Cheng Zeng

Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector…

Instrumentation and Detectors · Physics 2021-03-02 Zhijuan Xu , Shisheng Lin , Xiaoqiang Li , Shengjiao Zhang , Zhiqian Wu , Wenli Xu , Yanghua Lu , Sen Xu

We have discovered superconductivity in the two-layer semiconducting monochalcogenide heterostrutures PbTe/PbS, PbTe/PbSe and PbTe/YbS. By comparing data from two-layer samples with data from single monochalcogenide films we conclude that…

The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and…

Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device…

Mesoscale and Nanoscale Physics · Physics 2019-08-05 Hao Lee , S. Deshmukh , Jing Wen , V. Z. Costa , J. S. Schuder , M. Sanchez , A. S. Ichimura , Eric Pop , Bin Wang , A. K. M. Newaz

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have emerged as promising materials for electronic, optoelectronic, and valleytronic applications. Recent work suggests drastic changes of the band gap and exciton binding…

Mesoscale and Nanoscale Physics · Physics 2017-08-02 Eric Parzinger , Martin Hetzl , Ursula Wurstbauer , Alexander W. Holleitner

Van der Waals (vdW) heterostructures are receiving great attentions due to their intriguing properties and potentials in many research fields. The flow of charge carriers in vdW heterostructures can be efficiently rectified by the…

Mesoscale and Nanoscale Physics · Physics 2017-04-06 Yang Tan , Xiaobiao Liu , Zhiliang He , Yanran Liu , Mingwen Zhao , Han Zhang , Feng Chen

Van der Waals (vdW) heterostructures constructed with two-dimensional (2D) materials have attracted great interests, due to their fascinating properties and potential for novel applications. While earlier efforts have advanced the…

Mesoscale and Nanoscale Physics · Physics 2018-11-13 Zhonghui Nie , Yuhan Wang , Ziling Li , Yue Sun , Xiaoping Liu , Edmond Turcu , Yi Shi , Rong Zhang , Yu Ye , Yongbing Xu , Fengqiu Wang

Multilayer van der Waals (vdWs) heterostructures assembled by diverse atomically thin layers have demonstrated a wide range of fascinating phenomena and novel applications. Understanding the interlayer coupling and its correlation effect is…

Mesoscale and Nanoscale Physics · Physics 2017-06-26 Liang Xu , Wei-Qing Huang , Wangyu Hu , Bing-Xin Zhou , Anlian Pan , Gui-Fang Huang

The recently emerged organohalide perovskites (e.g., CH3NH3PbI3) have drawn intense attention for high efficiency solar cells. However, with a considerable solubility in many solvents, these perovskites are not typically compatible with…

Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by…

Mesoscale and Nanoscale Physics · Physics 2024-08-09 Seyed Saleh Mousavi Khaleghi , Jianyong Wei , Yumeng Liu , Zhengfang Fan , Kai Li , Kenneth B. Crozier , Yaping Dan

Light chargeable metal-ion batteries using semiconductor heterostructures are gaining enormous interest. A few such heterostructures such as MoS2/MoOy and TiS2/TiO2 have been shown to function as photocathodes in photochargeable Li-ion…

Materials Science · Physics 2023-07-07 Raheel Hammad , Amar Kumar , Tharangattu N. Narayanan , Soumya Ghosh

Transition metal dichalcogenides (TMD) monolayers, holding potential as good sunlight absorbers, are promising materials for next-generation optoelectronic devices. They may enable ultrathin photovoltaic(PV) devices thanks to their…

Materials Science · Physics 2022-11-28 C. Attaccalite , M. S. Prete , M. Palummo , O. Pulci

Applications like high density information storage, neuromorphic computing, nanophotonics, etc. require ultra-thin electronic devices which can be controlled with applied electric field. Of late, atomically thin two-dimensional (2D)…

We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to…

Mesoscale and Nanoscale Physics · Physics 2013-09-23 Hiram J. Conley , Bin Wang , Jed I. Ziegler , Richard F. Haglund , Sokrates T. Pantelides , Kirill I. Bolotin

Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as…

Materials Science · Physics 2018-01-08 Prasana K. Sahoo , Shahriar Memaran , Yan Xin , Luis Balicas , Humberto R. Gutiérrez

Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the controllable sub-micron fabrication of bipolar resistively…

Two-dimensional (2D) transition metal dichalcogenides (TMDs), especially MoS2 and WS2 recently attract extensive attentions due to their rich physics and great potential applications. Superior to graphene, MS2 (M = Mo/W) monolayers have a…

Materials Science · Physics 2013-12-06 Chunxiao Cong , Jingzhi Shang , Xing Wu , Bingchen Cao , Namphung Peimyoo , Caiyu Qiu , Litao Sun , Ting Yu

As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…

Incorporating a monolayer of WS$_2$ via interface engineering enhances the overall physical properties of a FAPbI3 perovskite based heterostructure. FAPbI$_3$/WS$_2$/TiO$_2$/ITO and FAPbI$_3$/TiO$_2$/ITO heterostructures were analyzed by…

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