Related papers: Berry phase engineering at oxide interfaces

Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE)…

The anomalous Hall effect (AHE), which provides a bridgeway between the geometry of quantum wavefunctions and transport measurements, has been a key focus of intensive studies. In addition to the well-studied linear AHE, governed by the…

Oxide materials exhibit several novel structural, magnetic, and electronic properties. Their stability under ambient conditions, easy synthesis, and high transition temperatures provide such systems with an ideal ground for realizing…

Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned…

The Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as a consequence of non-zero Berry curvature in momentum space. The…

The discovery of the intrinsic anomalous Hall effect (AHE) in noncollinear antiferromagnets where transverse Hall voltage emerges without magnetic field, has opened a plethora of promising opportunities in antiferromagnetic devices. The key…

Engineering the anomalous Hall effect (AHE) in the emerging magnetic topological insulators (MTIs) has great potentials for quantum information processing and spintronics applications. In this letter, we synthesize the epitaxial Bi2Te3/MnTe…

Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature.…

Recently, the topological flat bands and spin Hall effect have been experimentally observed in the AB-stacked MoTe$_2$/WSe$_2$ heterostructures. In this work, we systematically study the Berry curvature effects in moir\'{e} transition metal…

The Berry phase understanding of electronic properties has attracted special interest in condensed matter physics, leading to phenomena such as the anomalous Hall effect and the topological Hall effect. A non-vanishing Berry phase, induced…

Berry phase and Berry curvature play a key role in the development of topology in physics and do contribute to the transport properties in solid state systems. In this paper, we report the finding of novel nonzero Hall effect in topological…

In two-dimensional layered quantum materials, the stacking order of the layers determines both the crystalline symmetry and electronic properties such as the Berry curvature, topology and electron correlation. Electrical stimuli can…

The effects of competing orders, such as superconductivity and ferromagnetism, on a Fermi liquid are well established. A comprehensive understanding of such a competition in a metal whose Fermi surface has a non-trivial topology is yet to…

Recently, a type of Hall effect due to an unusual layer-locked Berry curvature called the layer Hall effect (LHE) has been reported in the even-layered two-dimensional antiferromagnetic (AFM) MnBi2Te4 [A. Gao et.al, Nature 595, 521 (2021)].…

Topological effects arising from the Berry curvature lead to intriguing transport signatures in quantum materials. Two such phenomena are the chiral anomaly and nonlinear Hall effect (NLHE). A unified description of these transport regimes…

In topological materials, the planar Hall effect (PHE) is often regarded as a hallmark of profound quantum phenomena-most notably the Adler-Bell-Jackiw chiral anomaly and Berry curvature-rendering it an indispensable tool for deciphering…

While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization,…

We theoretically investigate the localization mechanism of quantum anomalous Hall Effect (QAHE) with large Chern numbers $\mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films, by applying either nonmagnetic or…

We theoretically investigate the localization mechanism of the quantum anomalous Hall effect (QAHE) in the presence of spin-flip disorders. We show that the QAHE keeps quantized at weak disorders, then enters a Berry-curvature mediated…

We demonstrate advantages of samples made by mechanical stacking of exfoliated van der Waals materials for controlling the topological surface state of a 3-dimensional topological insulator (TI) via interaction with an adjacent magnet…