Related papers: Probing spin susceptibility of a correlated two-di…
We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the critical density n_c of the metal-insulator transition (2D MIT)…
A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances…
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in…
The low temperature dependence of the spin and charge susceptibilities of an anisotropic electron system in two dimensions is analyzed. It is shown that the presence of inflection points at the Fermi surface leads, generically, to a $ T…
We study how the non-Fermi-liquid two-phase state reveals itself in transport properties of high-mobility Si-MOSFETs. We have found features in zero-field transport, magnetotransport, and thermodynamic spin magnetization in a 2D correlated…
The wavevector and temperature dependent static spin susceptibility, \chi_s(Q,T), of clean interacting Fermi systems is considered in dimensions 1\leq d \leq 3. We show that at zero temperature \chi_s is a nonanalytic function of |Q|, with…
The temperature dependences of the conductivity \sigma(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane.…
We report thermodynamic magnetization measurements of two-dimensional electrons in several high mobility Si metal-oxide-semiconductor field-effect transistors. We provide evidence for an easily polarizable electron state in a wide density…
We apply the classical mapping technique developed recently by Dharma-wardana and Perrot for a study of the uniform two-dimensional electron system at arbitrary degeneracy and spin-polarization. Pair distribution functions, structure…
Nuclear magnetic resonance, electron paramagnetic resonance and magnetization measurements show that bulk Li$_x$ZnPc are strongly correlated one-dimensional metals. The temperature dependence of the nuclear spin-lattice relaxation rate…
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting…
The preparative method, characterization and magnetic susceptibility \chi measurements versus temperature T of the heavy fermion transition metal oxide LiV_{2}O_{4} are reported in detail. The intrinsic \chi(T) shows a nearly T-independent…
The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…
By analyzing the in-plane field magnetoconductivity, zero field transport, and thermodynamic spin magnetization in 2D correlated electron system in high mobility Si-MOS samples, we have revealed a novel high energy scale $T^*$, beyond the…
We measure thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon. Pauli spin susceptibility is observed to grow critically at low electron densities - behavior that is characteristic…
The temperature-dependent uniform magnetic susceptibility of interacting electrons in one dimension is calculated using several methods. At low temperature, the renormalization group reaveals that the Luttinger liquid spin susceptibility…
Inelastic neutron scattering measurements have been performed on single crystals of the heavy fermion compound Ce$_{0.925}$La$_{0.075}$Ru$_{2}$Si$_{2}$ in broad energy [0.1, 9.5 meV] and temperature [40 mK, 294 K] ranges in order to address…
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…
We developed a framework for directly calculating the spin susceptibility of anisotropic itinerant ferromagnets in the full temperature range within the coherent potential approximation in the disordered local moment picture. As a test of…
The spin susceptibility $\chi(T)$ of strongly correlated Fermi systems is investigated in the density region where Fermi-liquid theory fails. We attribute this failure to a specific quantum phase transition associated with a rearrangement…