Related papers: Giant spin Hall Effect in two-dimensional monochal…
Intrinsic electron- and hole-phonon interactions are investigated in monolayer transition metal dichalcogenides MX$_2$ (M=Mo,W; X=S,Se) based on a density functional theory formalism. Due to their structural similarities, all four materials…
Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating…
Recently, the strain engineering of two-dimensional materials such as graphene has attracted considerable attention for its great potential in functional nanodevices. Here, we theoretically and experimentally investigate the strain…
In metallic systems with spin-orbit coupling a longitudinal charge current may generate a transverse pure spin current; vice-versa an injected pure spin current may result in a transverse charge current. Such direct and inverse spin Hall…
Valley-related multiple Hall effect and piezoelectric response are novel transport characteristics in low-dimensional system, however few studies have reported their coexistence in a single system as well as their coupling relationships. By…
Since its discovery, graphene has been a promising material for spintronics: its low spin-orbit coupling, negligible hyperfine interaction, and high electron mobility are obvious advantages for transporting spin information over long…
Quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to the robust gapless states inside insulating bulk gap. Here, by using first-principles calculations, we discover group-IV chalcogenide Si2Te2…
Magnetic materials exhibiting topological Dirac fermions are attracting significant attention for their promising technological potential in spintronics. In these systems, the combined effect of the spin-orbit coupling and magnetic order…
Antiferromagnets are promising candidates for next-generation spintronic devices owing to their negligible stray fields and ultrafast spin dynamics. The noncollinear antiferromagnet $\mathrm{Mn}_{3}\mathrm{Sn}$ exhibits a large anomalous…
Graphene is a unique two-dimensional material with rich new physics and great promise for applications in electronic devices. Physical phenomena such as the half-integer quantum Hall effect and high carrier mobility are critically dependent…
In ferromagnets, electric current generally induces transverse Hall voltage in proportion to magnetization (anomalous Hall effect), and it is frequently used for electrical readout of the up and down spin states. While these properties are…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin…
The controlled generation of localized spin densities is a key enabler of semiconductor spintronics In this work, we study spin Hall effect induced edge spin accumulation in a two-dimensional hole gas with strong spin orbit interactions. We…
The interplay of the microscopic models and the symmetry considerations in application to the superconducting state of putative chiral superconductor Sr2RuO4 are presented. There is demonstrated that chiral two-band superconducting ordering…
The search for superconducting systems exhibiting nonreciprocal transport and, specifically, the diode effect, has proliferated in recent years. This trend encompasses a wide variety of systems, including planar hybrid structures,…
The paramount acumen for controlling spin transport properties in nonmagnetic materials is the usage of spin-orbit coupling (SOC). We propose a model to calculate the spin hall angle (SHA) for the elemental transition metal dichalcogenide…
The energy spectra of transition metal dichalcogenides are primarily influenced by the and orbitals. This results in a three-band model characterized by strong spin-orbit interaction. Investigating these bands using a projection into a…
Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the…
Transition metal dichalcogenides (TMDC) stand out with their high chemical stability and the possibility to incorporate a wide range of magnetic species between the layers. The behavior of conduction electrons in such materials intercalated…