Related papers: The Core Diffusion-Drift Field-Effect Transistor T…
We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly…
This lecture is a tutorial introduction to coherent effects in disordered electronic systems. Avoiding technicalities as most as possible, I present some personal points of view to describe well-known signatures of phase coherence like weak…
In this paper, a thermal-dynamical consistent model for mass transfer across permeable moving interfaces is proposed by using the energy variation method. We consider a restricted diffusion problem where the flux across the interface…
We study the surface conductivity of a field-effect transistor (FET) made of periodic array of spherical semiconductor nanocrystals (NCs). We show that electrons introduced to NCs by the gate voltage occupy one or two layers of the array.…
Even in the absence of Coulomb interactions phase fluctuations induced by quantum size effects become increasingly important in superconducting nano-structures as the mean level spacing becomes comparable with the bulk superconducting gap.…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
We study reversible deterministic dynamics of classical charged particles on a lattice with hard-core interaction. It is rigorously shown that the system exhibits three types of transport phenomena, ranging from ballistic, through diffusive…
A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap…
For the successful implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics, and real-time sensing applications it is essential to understand the factors that influence device switching times. Here we…
The theory of the I-V characteristics in diffusive superconductor/weak ferromagnet/superconductor (SFS) junction is developed. We show that the exchange field $h$ of the ferromagnet manifests itself as an additional conductance peak at $eV…
In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices,…
We investigate the critical behavior of a reaction-diffusion system exhibiting a continuous absorbing-state phase transition. The reaction-diffusion system strictly conserves the total density of particles, represented as a non-diffusive…
The multi-terminal generalization of the steady-state density functional theory for the description of electronic and thermal transport (iq-DFT) is presented. The linear response regime of the framework is developed leading to exact…
The results of an experimental study of interaction quantum correction to the conductivity of two-dimensional electron gas in A$_3$B$_5$ semiconductor quantum well heterostructures are presented for a wide range of $T\tau$-parameter…
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V…
We propose a new type of molecular transistor, the Quantum Interference Effect Transistor (QuIET), based on tunable current suppression due to quantum interference. We show that any aromatic hydrocarbon ring has two-lead configurations for…
This paper is a companion to 'Quantum Diffusion with Drift and the Einstein Relation I' (jointly submitted to arXiv). Its purpose is to describe and prove a certain number of technical results used in 'Quantum Diffusion with Drift and the…
A formal correspondence is established between the curvature theory of generalized implicit hypersurfaces, electromagnetism as expressed in terms of exterior differential systems, and thermodynamics. Starting with a generalized implicit…
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing…
We study coherent quantum transport through a superconducting film connected to normal-metal electrodes. Simple expressions for the differential conductance and the local density of states are obtained in the clean limit and for transparent…