Related papers: Polarization control in Nitride Quantum Well Light…
We consider tunneling from the spin-polarized tip into the Luttinger liquid edge state of quantum spin Hall system. This problem arose in context of the spin and charge fractionalization of an injected electron. Renormalization of the dc…
Gate-voltage control of inter-edge tunneling at a split-gate constriction in the fractional quantum Hall regime is reported. Quantitative agreement with the behavior predicted for out-of-equilibrium quasiparticle transport between chiral…
Spin-polarized quasiparticles can be easily created during spin-filtering through a ferromagnetic insulator (FI) in contact with a superconductor due to pair breaking effects at the interface. A combination FI-N-FI sandwiched between two…
We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved…
While the helical character of the edge channels responsible for charge transport in the quantum spin Hall regime of a two-dimensional topological insulator is by now well established, an experimental confirmation that the transport in the…
Transport through a tunnel junction connecting a superconductor to a spin-aligned quantum Hall fluid at filling $\nu$ is studied theoretically. The dominant transport channel at low temperatures is the tunnelling of Cooper pairs into edge…
The physical process driving low-current non-radiative recombinations in high-quality III-Nitride quantum wells is investigated. Lifetime measurements reveal that these recombinations scale with the overlap of the electron and hole…
In this paper, we address the problem of luminescence polarization in the case of nanostructures characterized by an in-plane shape asymmetry. We develop a simple semi-qualitative model revealing the mechanism that accounts for the…
The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across…
The p-n junction constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, is not considerably reported. This study presents a mechanical exfoliation-based technique to prepare…
We investigate the ballistic motion of electrons and holes in III-V semiconductor quantum wells with spin-orbit coupling and a homogeneous in-plane electric field. As a result of a non-perturbative treatment of both of these influences,…
We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both…
We demonstrate shadow evaporation-based fabrication of high-quality ultrasmall normal metal -- insulator -- superconductor tunnel junctions where the thickness of the superconducting electrode is not limited by the requirement of small…
The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped gallium nitride quantum wells. Experimental results provide unambiguous proof that a 2D hole gas in GaN grown on AlN does not need acceptor…
A single electron shared between two levels threaded by a magnetic flux is an irreducibly simple quantum system in which interference is predicted to occur. We demonstrate tuning of the tunnel coupling between two such electronic levels…
Fractional photon-assisted tunnelling is investigated both numerically and analytically in a double-well lattice. While integer photon-assisted tunnelling is a single-particle effect, fractional photon-assisted tunnelling is an…
The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling…
Localized quantum emitters in transition-metal dichalcogenides (TMDs) have recently emerged as solid-state candidates for on-demand sources of single photons. Due to the role of strain in the site-selective creation of TMD emitters, their…
Exploring the electron tunneling mechanisms in diverse materials systems constitutes a versatile strategy for tailoring the properties of optoelectronic devices. In this domain, bipolar vertical tunneling junctions composed of van der Waals…
Tunneling electron-positron pair production is studied in a new setup in which a strong low-frequency and a weak high-frequency laser field propagate in the same direction and collide head-on with a relativistic nucleus. The…