Related papers: Gate-Controlled VO2 Phase Transition for High-Perf…
Controlling materials to create and tune topological phases of matter could potentially be used to explore new phases of topological quantum matter and to create novel devices where the carriers are topologically protected. It has been…
Despite widespread interest in the phase-change applications of vanadium dioxide (VO$_2$), the fabrication of high-quality VO$_2$ thin films with elevated transition temperatures (TIMT) and high Insulator-Metal-Transition resistance…
We have made a detailed temperature-dependent photoemission study of VO_2/TiO_2(001) thin films, which show a metal-insulator transition at \sim 300 K. Clean surfaces were obtained by annealing the films in an oxygen atmosphere. Spectral…
Ultrafast photoexcitation is an emerging route to selective control of phase transitions. However, it is difficult to determine which modes govern the transformation and how effectively they are targeted by photoexcitation. This is…
P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or…
Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 {\deg}C. In this work, we use a modified atmospheric thermal oxidation…
Doping is an effective way to tune the property of metal oxides1-5, for achieving functional oxide electronics6-8. Previously we developed a controllable hydrogen doping technology at ambient conditions by use of electron-proton synergistic…
The photoelectric conversion efficiency of a solar cell is dependent on its temperature. When the solar radiation is incident on the photovoltaics (PV) panel, a large portion of it is absorbed by the underlying material which increases its…
VO$_{2}$ is a model material system which exhibits a metal to insulator transition at 67$^\circ$C. This holds potential for future ultrafast switching in memory devices, but typically requires a purely electronic process to avoid the slow…
The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von…
Maintaining comfortable temperatures for buildings, humans, and devices consumes a substantial portion of global energy, underscoring the urgent need for energy-efficient thermoregulation technologies. Dynamic radiative thermal emitters…
The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…
Rutile ($R$) phase VO$_2$ is a quintessential example of a strongly correlated bad-metal, which undergoes a metal-insulator transition (MIT) concomitant with a structural transition to a V-V dimerized monoclinic phase below T$_{MIT} \sim…
Thermal stealth and camouflage have been intensively studied for blending objects with their surroundings against remote thermal image detection. Adaptive control of infrared emissivity has been explored extensively as a promising way of…
VO2 features concomitant structural and metal-insulator transitions. This poses a challenge for understanding the underlying mechanism: is the transition triggered by a structural or by an electronic instability? The two scenarios are…
Placing quantum materials into optical cavities provides a unique platform for controlling quantum cooperative properties of matter, via both weak and strong light-matter coupling. Here we report the experimental evidence of reversible…
The metal-insulator transition (MIT) of V6O11 is studied by means of electronic structure calculations using the augmented spherical wave method. The calculations are based on density functional theory and the local density approximation.…
The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and…
Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator…
The accessibility of both n-type and p-type MoS2 FET is necessary for complementary device applications involving MoS2. However, MoS2 PFET is rarely achieved due to pinning effect resulting high Rc at metal-MoS2 interface and the inherently…