Related papers: Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit…
We observe an experimental signature of the role of the phonons in spin relaxation between triplet and singlet states in a two-electron quantum dot. Using both the external magnetic field and the electrostatic confinement potential, we…
We propose a simple setup of three coupled quantum dots in the Coulomb blockade regime as a source for spatially separated currents of spin-entangled electrons. The entanglement originates from the singlet ground state of a quantum dot with…
We measure the spin splitting in a magnetic field $B$ of localized states in single-electron transistors using a new method, inelastic spin-flip cotunneling. Because it involves only internal excitations, this technique gives the most…
In this theoretical manuscript I propose a scheme for entangling a single electron semiconductor spin qubit with a single electron semiconductor charge qubit in a triangular triple quantum dot configuration. Two out of three quantum dots…
In semiconductor nanostructures, spin blockade (SB) is the most scalable mechanism for electrical spin readout, requiring only two bound spins for its implementation. In conjunction with charge sensing techniques, SB has led to…
Gate-defined semiconductor quantum dots utilize fast electrical control to manipulate spin and charge states of individual electrons. Electrical pulse distortions can limit control fidelities but are difficult to measure at the device…
We demonstrate direct measurements of the spin-orbit interaction and Land\'e g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a…
Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different…
We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy…
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable…
For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the existing gates required to manipulate the qubits (Veldhorst 2017,…
Rapid coherent control of electron spin states is required for implementation of a spin-based quantum processor. We demonstrate coherent control of electronic spin states in a double quantum dot by sweeping an initially prepared spin…
Pauli spin blockade in quantum dot systems occurs when the charge transport is allowed only for some spin states, and it has been an efficient tool in spin-based qubit devices in semiconductors. We theoretically investigate a Pauli spin…
We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…
Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as…
We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…
In Si quantum dots, valley degree of freedom, in particular the generally small valley splitting and the dot-dependent valley-orbit phase, adds complexities to the low-energy electron dynamics and the associated spin qubit manipulation.…