Related papers: All-spin logic operations: Memory device and Recon…
A new proposal is given for designing a non-volatile, completely spin logic device, that can be reprogrammed for different functional classical logical operations. We use the concept of bias driven spin dependent circular current and…
In this paper we discuss the potential of emerging spintorque devices for computing applications. Recent proposals for spinbased computing schemes may be differentiated as all-spin vs. hybrid, programmable vs. fixed, and, Boolean vs.…
Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…
Spintronic devices that utilize the spin degree of freedom of a charge carrier to store, process or transmit information, may be better performers than their traditional electronic counterparts if special properties of "spin" are exploited…
Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two…
All-spin-based computing combining logic and nonvolatile magnetic memory is promising for emerging information technologies. However, the realization of a universal spin logic operation representing a reconfigurable building block with…
We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and…
We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced…
In electronics, information has been traditionally stored, processed and communicated using an electron's charge. This paradigm is increasingly turning out to be energy-inefficient, because movement of charge within an…
Control over electron-spin states, such as coherent manipulation, filtering and measurement promises access to new technologies in conventional as well as in quantum computation and quantum communication. We review our proposal of using…
We put forward a new proposal of designing charge-based logic devices considering a cyclic molecule that can be programmed and re-programmed for different functional logical operations and suitably engineered for data storage as well. The…
Present day computers expend orders of magnitude more computational resources to perform various cognitive and perception related tasks that humans routinely perform everyday. This has recently resulted in a seismic shift in the field of…
We report multifunctional operation based on the nonlinear dynamics in a single microelectromechanical system (MEMS) resonator. This Letter focuses on a logic-memory device that uses a closed loop control and a nonlinear MEMS resonator in…
Recently several device and circuit design techniques have been explored for applying nano-magnets and spin torque devices like spin valves and domain wall magnets in computational hardware. However, most of them have been focused on…
As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve…
Programming a quantum device describes the usage of quantum logic gates, agnostic of hardware specifics, to perform a sequence of operations with (typically) a computing or sensing task in mind. Such programs have been executed on digital…
Magnetic skyrmions are promising candidates for logic-in-memory applications, intrinsically merging high density non-volatile data storage with computing capabilities, owing to their nanoscale size, fast motion, and mutual repulsions.…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…
Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic…