Related papers: Breaking the doping limit in silicon by deep impur…
The physical properties of low energy superconducting quasiparticles in high- $T_c$ superconductors are examined using magnetic penetration depth and specific heat experimental data. We find that the low energy density of states of…
Nitrogen doped carbon nanotubes have been synthesized using pyrolysis and characterized by Scanning Tunneling Spectroscopy and transmission electron microscopy. The doped nanotubes are all metallic and exhibit strong electron donor states…
The novel nickelate superconductors of infinite-layer type feature challenging electronic pecularities in the normal-state phase diagram with doping. Distinct many-body behavior and different dispersion regimes of the entangled…
Zincblende copper iodide has been attracting growing interest as p-type semiconductor for applications in transparent electronics and transparent thermoelectrics. A key step towards technological applications is the possibility to enhance…
In this paper we investigate, computationally and experimentally, the phase stability, electronic structure properties, and the propensity for n-type doping of In$_{2}$X$_{2}$O$_{7}$ (X=Si, Ge) ternary oxides. This family of materials…
The effects of partial substitution of Cu and Co for Ni in the intermetallic perovskite superconductor MgCNi3 are reported. Calculation of the expected electronic density of states suggests that electron (Cu) and hole (Co) doping should…
A comprehensive first principles study on the electronic topological transition in a number of 122 family of Fe based superconductors is presented. Doping as well as temperature driven Lifshitz transitions are found from first principles…
We report a systematic study of electron doping of Sr2RuO4 by non-isovalent substitution of La^(3+) for Sr^(2+). Using a combination of de Haas-van Alphen oscillations, specific heat, and resistivity measurements, we show that electron…
Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substrate and overcompensation by donor-like states related to the…
We report a first principles systematic study of atomic, electronic, and magnetic properties of hydrogen saturated silicon nanowires (H-SiNW) which are doped by transition metal (TM) atoms placed at various interstitial sites. Our results…
We theoretically propose a possibility of realizing high $T_c$ superconductivity having $s\pm$-wave symmetry in the heavily hole-doped infinite layer nickelates La$_{1-x}$Sr$_x$NiO$_2$. We consider situations where the original $P4/mmm$…
A self-consistent expression for the surface recombination velocity $S$ and the surface Fermi level unpinning energy as a function of light excitation power ($P$) is presented for n- and p-type semiconductors doped above the 10$^{16}$…
Pushing dopant concentrations beyond the solubility limit in semiconductors -- a process known as hyperdoping -- has been demonstrated as an effective strategy for inducing superconductivity in cubic-diamond Si and SiGe materials.…
We present ab initio density-functional calculations for acceptors, donors, and native defects in aluminum nitride, showing that acceptors are deeper (Be ~ 0.25 eV, Mg_ 0.45 eV) and less soluble than in GaN; at further variance with GaN,…
High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an…
Motivated by the evidence in PCCO and NCCO of a magnetic quantum critical point at which Neel order is destroyed, we study the evolution with doping of the T=0 quantum phases of the electron doped cuprates. At low doping, there is a…
Doping of strongly layered ionic oxides is an established paradigm for creating novel electronic behavior. This is nowhere more apparent than in superconductivity, where doping gives rise to high temperature superconductivity in cuprates…
High purity Ge (HPGe) is the key material for gamma ray detector production. Its high purity level (< 2x10^(-4) ppb of doping impurity) has to be preserved in the bulk during the processes needed to form the detector junctions. With the…
Doping problems in GaN and in AlGaN alloys are addressed on the basis of state-of-the-art first-principles calculations. For n-type doping we find that nitrogen vacancies are too high in energy to be incorporated during growth, but silicon…
We attempted Ce doping in La2CuO4 with the K2NiF4 (T) structure by molecular beam epitaxy. At low growth temperature and with an appropriate substrate choice, we found that Ce can be incorporated into the K2NiF4 lattice up to x ~ 0.06,…